| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Alteration of diffusion profiles in semiconductors due to p−n junctions
|
Anthony, P.J.
|
|
1982
|
25 |
12 |
p. 1171-1177
7 p.
|
artikel
|
| 2 |
Announcement
|
|
|
1982
|
25 |
12 |
p. 1215-1216
2 p.
|
artikel
|
| 3 |
Carrier recombination in single crystal PbSe
|
Zogg, H.
|
|
1982
|
25 |
12 |
p. 1147-1155
9 p.
|
artikel
|
| 4 |
Diffusivity and growth rate of silicon in solid-phase epitaxy with an aluminum medium
|
Qingheng, Hua
|
|
1982
|
25 |
12 |
p. 1187-1188
2 p.
|
artikel
|
| 5 |
Direct verification of heterojunction rules
|
Nussbaum, Allen
|
|
1982
|
25 |
12 |
p. 1201-1204
4 p.
|
artikel
|
| 6 |
Electroabsorption produced mixed injection and its effect on the determination of ionization coefficients
|
Bulman, G.E.
|
|
1982
|
25 |
12 |
p. 1189-1200
12 p.
|
artikel
|
| 7 |
List of contents and author index
|
|
|
1982
|
25 |
12 |
p. i-xiv
nvt p.
|
artikel
|
| 8 |
MOS transistors with a forward-biased source-substrate junction
|
Velchev, N.B.
|
|
1982
|
25 |
12 |
p. 1157-1160
4 p.
|
artikel
|
| 9 |
On the open-circuit voltage of a Schottky-barrier MIS solar cell
|
Daw, A.N.
|
|
1982
|
25 |
12 |
p. 1205-1206
2 p.
|
artikel
|
| 10 |
Power MOSFET characteristics with modified spice modeling
|
Cheng, Hwa
|
|
1982
|
25 |
12 |
p. 1209-1212
4 p.
|
artikel
|
| 11 |
Reply to comment on the paper entitled “A note on βup and βdown I2L transistors”
|
Berger, Horst H.
|
|
1982
|
25 |
12 |
p. 1213-
1 p.
|
artikel
|
| 12 |
The effect of Al-GaAs interaction on the technology of self-aligned gallium arsenide MESFETs
|
Singh, B.R.
|
|
1982
|
25 |
12 |
p. 1206-1209
4 p.
|
artikel
|
| 13 |
Theoretical basis for field calculations on multi-dimensional reverse biased semiconductor devices
|
Adler, M.S.
|
|
1982
|
25 |
12 |
p. 1179-1186
8 p.
|
artikel
|
| 14 |
Theory of open circuit photo-voltage in degenerate abrupt p-n junctions
|
Vijay Kumar, D.
|
|
1982
|
25 |
12 |
p. 1161-1164
4 p.
|
artikel
|
| 15 |
Transconductance degradation in VVMOS power transistors due to thermal and field effects
|
Tarasewicz, S.W.
|
|
1982
|
25 |
12 |
p. 1165-1170
6 p.
|
artikel
|
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