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                             13 results found
no title author magazine year volume issue page(s) type
1 Approximations for Fermi-Dirac integrals, especially the function F 1 2 (η) used to describe electron density in a semiconductor Blakemore, J.S.
1982
25 11 p. 1067-1076
10 p.
article
2 A re-extrapolation technique in Newton-SOR computer simulation of semiconductor devices Wang, Cheng T.
1982
25 11 p. 1083-1087
5 p.
article
3 Diffusion-profile measurement in InP with Schottky diodes Aytac, S.
1982
25 11 p. 1135-1139
5 p.
article
4 Drift-diffusion theory of symmetrical double-junction diodes Schmidt, Pierre E.
1982
25 11 p. 1129-1133
5 p.
article
5 Effective electron mobility in inversion-mode Al2O3-InP MISFETS Shinoda, Yukinobu
1982
25 11 p. 1119-1124
6 p.
article
6 Effect of implant and anneal parameters on boron-implanted Si as determined from ellipsometry and etching techniques Immorlica Jr., Anthony A.
1982
25 11 p. 1141-1145
5 p.
article
7 Moderate inversion in MOS devices Tsividis, Yannis
1982
25 11 p. 1099-1104
6 p.
article
8 On early stage degradation in Zn diffused GaAs LED Cognetti, C.
1982
25 11 p. 1093-1097
5 p.
article
9 On the analysis of diffusion length measurements by SEM Donolato, C.
1982
25 11 p. 1077-1081
5 p.
article
10 Resistance calculation of a cylindrical semiconductor with continuously variable conductivity along its axis covered by circular electrodes Zehentner, Ján
1982
25 11 p. 1105-1109
5 p.
article
11 Specific contact resistance and noise in contacts on thin layers Vandamme, L.K.J.
1982
25 11 p. 1125-1127
3 p.
article
12 Study of electron traps in the thin interfacial oxide layer of Al-, Au- and Sn-n GaAs Schottky barriers by detrapping experiments Van Meirhaeghe, R.L.
1982
25 11 p. 1089-1092
4 p.
article
13 Thin film polycrystalline Si p-n junction solar cells with preferential doping Elnahwy, S.
1982
25 11 p. 1111-1117
7 p.
article
                             13 results found
 
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