| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Alteration of diffusion profiles in semiconductors due to p-n junctions
|
Anthony, P.J.
|
|
1982
|
25 |
10 |
p. 1003-1009
7 p.
|
artikel
|
| 2 |
A new approach to the determination of MS-barrier heights from photoelectric data and/or an alternative way to determine the value of the Richardson constant
|
de Sousa Pires, J.
|
|
1982
|
25 |
10 |
p. 989-993
5 p.
|
artikel
|
| 3 |
An improved AuGe ohmic contact to n-GaAs
|
Nathan, Marshall I.
|
|
1982
|
25 |
10 |
p. 1063-1065
3 p.
|
artikel
|
| 4 |
Au/Be ohmic contacts to p-type indium phosphide
|
Valois, A.J.
|
|
1982
|
25 |
10 |
p. 973-977
5 p.
|
artikel
|
| 5 |
Average mobilities of carriers in subdoped silicon layers
|
Xu, Ju-Yan
|
|
1982
|
25 |
10 |
p. 979-986
8 p.
|
artikel
|
| 6 |
Dielectric relaxation contribution to dispersion of junction admittance
|
Anderson, W.W.
|
|
1982
|
25 |
10 |
p. 1033-1044
12 p.
|
artikel
|
| 7 |
Effect of trap distribution on g-r noise spectra
|
Lee, Kwyro
|
|
1982
|
25 |
10 |
p. 999-1002
4 p.
|
artikel
|
| 8 |
Hot electron diffusion in fine line semiconductor devices
|
Jones, W.T.
|
|
1982
|
25 |
10 |
p. 1017-1021
5 p.
|
artikel
|
| 9 |
Low-frequency noise due to carrier recombination in a p-n junction
|
Lee, Kwyro
|
|
1982
|
25 |
10 |
p. 995-998
4 p.
|
artikel
|
| 10 |
Minority carrier diffusion length in LPE In x Ga1−x P: N layers (x < 0.01)
|
Haefner, H.
|
|
1982
|
25 |
10 |
p. 1023-1026
4 p.
|
artikel
|
| 11 |
New method for the determination of the surface barrier heights in MIS tunnel diodes (solar cells)
|
Krawczyk, S.K.
|
|
1982
|
25 |
10 |
p. 1027-1031
5 p.
|
artikel
|
| 12 |
Photo-induced effects in hydrogenated amorphous silicon P-I-N diodes
|
Sakata, Isao
|
|
1982
|
25 |
10 |
p. 1059-1062
4 p.
|
artikel
|
| 13 |
Study of surface charge in VMOS structures
|
Stoev, I.
|
|
1982
|
25 |
10 |
p. 987-988
2 p.
|
artikel
|
| 14 |
The effect of Ti and Ti/Au metallisation on mobile charge in HCl grown oxides
|
Sutherland, R.R.
|
|
1982
|
25 |
10 |
p. 1057-1058
2 p.
|
artikel
|
| 15 |
The influence of hydrogen gas on the characteristics of amorphous silicon deposited by RF sputtering
|
Lue, J.T.
|
|
1982
|
25 |
10 |
p. 1011-1016
6 p.
|
artikel
|
| 16 |
Theoretical temperature dependence of short-circuit current of drift-field solar cells
|
Chida, K.
|
|
1982
|
25 |
10 |
p. 1055-1056
2 p.
|
artikel
|
| 17 |
Theory of concentration profiling technique for semiconductors with many deep levels
|
Qin, Guo-Gang
|
|
1982
|
25 |
10 |
p. 1045-1053
9 p.
|
artikel
|
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