nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A simple method of determining the Al concentration in GaAlAs layers used in double heterostructure lasers
|
Brosson, Philippe |
|
1981 |
24 |
9 |
p. 887-888 2 p. |
artikel |
2 |
Barrier height enhancement of the Schottky barrier diode using a thin uniformly-doped surface layer
|
Ching-Yuan Wu, |
|
1981 |
24 |
9 |
p. 857-862 6 p. |
artikel |
3 |
Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level
|
Dorkel, J.M. |
|
1981 |
24 |
9 |
p. 821-825 5 p. |
artikel |
4 |
Determination of the maximum efficiency solar cell structure
|
Pauwels, H. |
|
1981 |
24 |
9 |
p. 835-843 9 p. |
artikel |
5 |
On the Dember-effect and a new trap-controlled photo-polarization
|
Moreau, Y. |
|
1981 |
24 |
9 |
p. 883-885 3 p. |
artikel |
6 |
Photoconductive properties of the evaporated CdTe-sintered CdS heterojunction
|
Junji Saraie, |
|
1981 |
24 |
9 |
p. 845-849 5 p. |
artikel |
7 |
Punch-through currents in P+NP+ and N+PN+ sandwich structures—I
|
Lohstroh, J. |
|
1981 |
24 |
9 |
p. 805-814 10 p. |
artikel |
8 |
Punch-through currents in P+NP+ and N+PN+ sandwich structures—II
|
Lohstroh, J. |
|
1981 |
24 |
9 |
p. 815-820 6 p. |
artikel |
9 |
Recombination properties of a diffused pn junction determined by spectral response measurements
|
Conti, M. |
|
1981 |
24 |
9 |
p. 879-881 3 p. |
artikel |
10 |
Silicon nitride for the improvement of silicon inversion layer solar cells
|
Hezel, R. |
|
1981 |
24 |
9 |
p. 863-868 6 p. |
artikel |
11 |
Spreading resistance correction formula more suited for the Gauss-Laguerre quadrature
|
Vandervorst, W.B. |
|
1981 |
24 |
9 |
p. 851-856 6 p. |
artikel |
12 |
The effect of surface recombination on pin diodes
|
Aitchison, J.M. |
|
1981 |
24 |
9 |
p. 795-804 10 p. |
artikel |
13 |
Theoretical analysis of hall factor and hall mobility in p-type silicon
|
Lin, J.F. |
|
1981 |
24 |
9 |
p. 827-833 7 p. |
artikel |
14 |
Theoretical and practical investigation of the thermal generation in gate controlled diodes
|
van der Spiegel, Jan |
|
1981 |
24 |
9 |
p. 869-877 9 p. |
artikel |