| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical approach of hot electron transport in small size MOSFET's
|
Leburton, J.P.
|
|
1981
|
24 |
8 |
p. 763-771
9 p.
|
artikel
|
| 2 |
A theory of generation-recombination noise from the velocity saturated channel of a GaAs MESFET
|
Debney, B.T.
|
|
1981
|
24 |
8 |
p. 703-708
6 p.
|
artikel
|
| 3 |
Au/Ge based ohmic contacts to GaAs
|
Grovenor, C.R.M.
|
|
1981
|
24 |
8 |
p. 792-793
2 p.
|
artikel
|
| 4 |
Boron profile in implanted SiO2 on silicon substrate; comparison between theory and experiment
|
Essaid, A.
|
|
1981
|
24 |
8 |
p. 787-788
2 p.
|
artikel
|
| 5 |
Effective recombination velocity at the NN + interface
|
Ram, G.V.
|
|
1981
|
24 |
8 |
p. 753-761
9 p.
|
artikel
|
| 6 |
1 f noise in GaAs MESFETS
|
Suh, C.H.
|
|
1981
|
24 |
8 |
p. 717-718
2 p.
|
artikel
|
| 7 |
Fundamental limitations of the Controlled Avalanche Transit Time transistor (CATT)
|
Crosnier, Y.
|
|
1981
|
24 |
8 |
p. 731-737
7 p.
|
artikel
|
| 8 |
GaAs Hall devices produced by local ion implantation
|
Pettenpaul, E.
|
|
1981
|
24 |
8 |
p. 781-786
6 p.
|
artikel
|
| 9 |
Interpretation of non-equilibrium measurements on MOS devices using the linear voltage ramp technique
|
Faraone, L.
|
|
1981
|
24 |
8 |
p. 709-716
8 p.
|
artikel
|
| 10 |
Measurement of space charge generation-recombination current in Hg1−x Cd xTe photodiodes by deep level transient spectroscopy
|
Polla, D.L.
|
|
1981
|
24 |
8 |
p. 719-723
5 p.
|
artikel
|
| 11 |
On the recombination of electrons and holes at traps with finite relaxation time
|
Dhariwal, S.R.
|
|
1981
|
24 |
8 |
p. 749-752
4 p.
|
artikel
|
| 12 |
Punch through and non-punch through thyristors
|
Singh, D.N.
|
|
1981
|
24 |
8 |
p. 790-791
2 p.
|
artikel
|
| 13 |
Solar cell fill factors: General graph and empirical expressions
|
Green, Martin A.
|
|
1981
|
24 |
8 |
p. 788-789
2 p.
|
artikel
|
| 14 |
Surface recombination effects on the performance of n + p step and diffused junction silicon solar cells
|
Arora, J.D.
|
|
1981
|
24 |
8 |
p. 739-747
9 p.
|
artikel
|
| 15 |
The influence of mobile ions on the Si/SiO2 interface traps
|
Hillen, M.W.
|
|
1981
|
24 |
8 |
p. 773-780
8 p.
|
artikel
|
| 16 |
The self-consistent analysis of the on-set of strong inversion in an MOS transistor with double-layer substrate impurity profile
|
Yu, Swei-Yam
|
|
1981
|
24 |
8 |
p. 725-729
5 p.
|
artikel
|
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