| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
An addendum to “on neutrality and equilibrium in semiconductors”
|
Chiou, C.-F.
|
|
1981
|
24 |
7 |
p. 701-
1 p.
|
article
|
| 2 |
An analytical expression for the threshold voltage of a small geometry MOSFET
|
Akers, L.A.
|
|
1981
|
24 |
7 |
p. 621-627
7 p.
|
article
|
| 3 |
A new approach to model d.c. and a.c. characteristics of junction gate field effect transistors
|
Sodini, D.
|
|
1981
|
24 |
7 |
p. 635-642
8 p.
|
article
|
| 4 |
A new MNOS memory element—the tunnel diode
|
Rutter, P.
|
|
1981
|
24 |
7 |
p. 689-694
6 p.
|
article
|
| 5 |
A new technique for evaluating SiO2 layers on an LSI device
|
Koyama, H.
|
|
1981
|
24 |
7 |
p. 698-700
3 p.
|
article
|
| 6 |
A numerical analysis of avalanche breakdown in short-channel MOSFETs
|
Kotani, N.
|
|
1981
|
24 |
7 |
p. 681-687
7 p.
|
article
|
| 7 |
A quick method for the determination of bulk generation lifetime in semiconductors from pulsed MOS capacitance measurements
|
Rabbani, K.S.
|
|
1981
|
24 |
7 |
p. 661-664
4 p.
|
article
|
| 8 |
Average conductivity of complementary-error and Gaussian doped layers in gallium arsenide
|
Wang, Li-Mo
|
|
1981
|
24 |
7 |
p. 665-673
9 p.
|
article
|
| 9 |
Ballistic electron transport in a transverse magnetic field
|
Rees, G.J.
|
|
1981
|
24 |
7 |
p. 695-698
4 p.
|
article
|
| 10 |
Barrier-controlled current conduction in field-controlled thyristors
|
Baliga, B.Jayant
|
|
1981
|
24 |
7 |
p. 617-620
4 p.
|
article
|
| 11 |
Experimental investigation of turn-on spread in a thyristor
|
Chasnikov, I.G.
|
|
1981
|
24 |
7 |
p. 649-653
5 p.
|
article
|
| 12 |
Ionization coefficient measurement in GaAs by using multiplication noise characteristics
|
Ando, H.
|
|
1981
|
24 |
7 |
p. 629-634
6 p.
|
article
|
| 13 |
Low-resistance, long-life contacts by laser-annealing of silver-implanted p-type PbTe
|
Bryant, F.J.
|
|
1981
|
24 |
7 |
p. 675-680
6 p.
|
article
|
| 14 |
On the theory of Debye averaging in the C-V profiling of semiconductors
|
Kroemer, Herbert
|
|
1981
|
24 |
7 |
p. 655-660
6 p.
|
article
|
| 15 |
Reverse characteristics of rectifying TeSeCd structures
|
Champness, C.H.
|
|
1981
|
24 |
7 |
p. 643-648
6 p.
|
article
|
| 16 |
Silicon photovoltaic cells
|
Hall, R.N.
|
|
1981
|
24 |
7 |
p. 595-616
22 p.
|
article
|
Journal description