| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Activation energies for the different electromigration mechanisms in aluminum
|
Schreiber, H.-U.
|
|
1981
|
24 |
6 |
p. 583-589
7 p.
|
artikel
|
| 2 |
A dynamic model of the p-n-n + step recovery diodes for the numerical analysis of pulse circuits
|
Ceremuga, Janina
|
|
1981
|
24 |
6 |
p. 501-510
10 p.
|
artikel
|
| 3 |
A model for the breakdown characteristics of p-channel MOS transistor protection devices
|
Maes, H.
|
|
1981
|
24 |
6 |
p. 523-531
9 p.
|
artikel
|
| 4 |
Determination of the channel temperature in a GaAs MESFET from the emission transients of deep traps
|
Pinsard, J.L.
|
|
1981
|
24 |
6 |
p. 551-555
5 p.
|
artikel
|
| 5 |
High-low junctions for solar cell applications
|
del Alamo, J.
|
|
1981
|
24 |
6 |
p. 533-538
6 p.
|
artikel
|
| 6 |
Interface edge effect and its contribution to the frequency dispersion of metal-oxide-semiconductor admittance
|
Sun, Y.C.
|
|
1981
|
24 |
6 |
p. 569-576
8 p.
|
artikel
|
| 7 |
Mobility of majority carriers in doped noncompensated silicon
|
Tošić, T.I.
|
|
1981
|
24 |
6 |
p. 577-582
6 p.
|
artikel
|
| 8 |
Multi-scan electron beam sintering of AlSi ohmic contacts
|
Finetti, M.
|
|
1981
|
24 |
6 |
p. 539-543
5 p.
|
artikel
|
| 9 |
n-Channel Si-gate process for MNOS EEPROM transistors
|
Jacobs, Erwin P.
|
|
1981
|
24 |
6 |
p. 517-522
6 p.
|
artikel
|
| 10 |
Numerical investigation of mesh size convergence rate of the finite element method in MESFET simulation
|
Laux, S.E.
|
|
1981
|
24 |
6 |
p. 485-493
9 p.
|
artikel
|
| 11 |
Poisson process and integrated circuit yield prediction
|
Hemmert, Richard S.
|
|
1981
|
24 |
6 |
p. 511-515
5 p.
|
artikel
|
| 12 |
Rectification in AlxGa1-xAs-GaAs N-n heterojunction devices
|
Lee, S.C.
|
|
1981
|
24 |
6 |
p. 563-568
6 p.
|
artikel
|
| 13 |
Short channel erase in n-channel Si-gate MNOS EEPROM transistors
|
Jacobs, Erwin P.
|
|
1981
|
24 |
6 |
p. 479-483
5 p.
|
artikel
|
| 14 |
Simple and accurate representation of implantation parameters by low order polynomals
|
Selberherr, S.
|
|
1981
|
24 |
6 |
p. 591-593
3 p.
|
artikel
|
| 15 |
Spreading resistance calculations by the variational method
|
Choo, S.C.
|
|
1981
|
24 |
6 |
p. 557-562
6 p.
|
artikel
|
| 16 |
Stability of SCCDs with extremely low interface state density
|
Risch, L.
|
|
1981
|
24 |
6 |
p. 545-550
6 p.
|
artikel
|
| 17 |
Tunnel diode reverse characteristics at different temperatures
|
Van Cong, H.
|
|
1981
|
24 |
6 |
p. 495-500
6 p.
|
artikel
|
Tijdschrift beschrijving