| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A.C. admittance studies of Schottky diodes using a vector-analyzer-system
|
Engemann, J.
|
|
1981
|
24 |
5 |
p. 467-474
8 p.
|
artikel
|
| 2 |
A high voltage UMOS transistor
|
Tarasewicz, S.
|
|
1981
|
24 |
5 |
p. 435-443
9 p.
|
artikel
|
| 3 |
A low-leakage-current CdSe thin film transistor
|
Luo, F.C.
|
|
1981
|
24 |
5 |
p. 461-465
5 p.
|
artikel
|
| 4 |
An improved analysis of the Schottky barrier solar cell
|
Klimpke, C.M.H.
|
|
1981
|
24 |
5 |
p. 401-406
6 p.
|
artikel
|
| 5 |
Arsenic profiles in bipolar transistors with polysilicon emitters
|
Ashburn, P.
|
|
1981
|
24 |
5 |
p. 475-476
2 p.
|
artikel
|
| 6 |
Equivalent input spectrum and drain current spectrum for 1/ƒ noise in short channel MOS transistors
|
Gentil, P.
|
|
1981
|
24 |
5 |
p. 411-414
4 p.
|
artikel
|
| 7 |
Growth and characterization of large diameter undoped semi-insulating GaAs for direct ion implanted FET technology
|
Thomas, R.N.
|
|
1981
|
24 |
5 |
p. 387-399
13 p.
|
artikel
|
| 8 |
Hot electron noise and g-r noise in short-channel JFETs
|
Kim, S.K.
|
|
1981
|
24 |
5 |
p. 429-434
6 p.
|
artikel
|
| 9 |
Hot electron noise effects in buried channel MOSFETs
|
Kim, S.K.
|
|
1981
|
24 |
5 |
p. 425-428
4 p.
|
artikel
|
| 10 |
Numerical analysis on abnormal thyristor forward voltage increase due to heavy doping in gated p-base layer
|
Nakagawa, Akio
|
|
1981
|
24 |
5 |
p. 455-459
5 p.
|
artikel
|
| 11 |
Operating limits of Al-alloyed high-low junctions for BSF solar cells
|
del Alamo, J.
|
|
1981
|
24 |
5 |
p. 415-420
6 p.
|
artikel
|
| 12 |
Semiconductor device sensitive to magnetic field gradient
|
Janavičien≐, N.J.
|
|
1981
|
24 |
5 |
p. 407-410
4 p.
|
artikel
|
| 13 |
Temperature dependent capacitance voltage measurements for the detection of trap levels in semiconductors
|
Rijks, H.J.
|
|
1981
|
24 |
5 |
p. 476-478
3 p.
|
artikel
|
| 14 |
Temperature rise in microwave p-i-n diodes: A computer aided analysis
|
Ramamurthy, V.
|
|
1981
|
24 |
5 |
p. 445-453
9 p.
|
artikel
|
| 15 |
The minority-carrier injection in the completely depleted MSM structure
|
Małachowski, M.J.
|
|
1981
|
24 |
5 |
p. 381-385
5 p.
|
artikel
|
| 16 |
Tunneling currents in In0.53Ga0.47As homojunction diodes and design of InGaAs/InP hetero-structure avalanche photodiodes
|
Ito, Masanori
|
|
1981
|
24 |
5 |
p. 421-424
4 p.
|
artikel
|
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