| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate two-dimensional simulation of double-beveled p−n junctions
|
Kumar, R.
|
|
1981
|
24 |
4 |
p. 377-379
3 p.
|
artikel
|
| 2 |
An algorithm for two-dimensional simulation of reverse-biased beveled p−n junctions
|
Kumar, R.
|
|
1981
|
24 |
4 |
p. 309-311
3 p.
|
artikel
|
| 3 |
An investigation of the origin of the main electron trap in GaAs
|
Subramanian, S.
|
|
1981
|
24 |
4 |
p. 287-291
5 p.
|
artikel
|
| 4 |
Base component of gain and delay time in base-implanted bipolar transistors
|
Elmasry, M.I.
|
|
1981
|
24 |
4 |
p. 371-375
5 p.
|
artikel
|
| 5 |
Emitter space charge layer transit time in bipolar junction transistors
|
Rustagi, S.C.
|
|
1981
|
24 |
4 |
p. 367-370
4 p.
|
artikel
|
| 6 |
Enhanced barrier height of AuIn1−x Ga xAsyP1−y Schottky diodes
|
Bhattacharya, P.K.
|
|
1981
|
24 |
4 |
p. 297-300
4 p.
|
artikel
|
| 7 |
Errors in threshold-voltage measurements of MOS transistors for dopant-profile determinations
|
Chi, Min-Hwa
|
|
1981
|
24 |
4 |
p. 313-316
4 p.
|
artikel
|
| 8 |
Estimation of the conduction band deformation potential in indium phosphide from the temperature variation of drift mobility
|
Hamilton, D.K.
|
|
1981
|
24 |
4 |
p. 317-319
3 p.
|
artikel
|
| 9 |
Nonequilibrium properties of MIS-capacitors
|
Kelberlau, Ulrich
|
|
1981
|
24 |
4 |
p. 321-327
7 p.
|
artikel
|
| 10 |
The diffusion of silicon in germanium
|
Räisänen, J.
|
|
1981
|
24 |
4 |
p. 333-336
4 p.
|
artikel
|
| 11 |
The effect of excess gate current on input impedance of a JFET amplifier
|
Kumata, Noriaki
|
|
1981
|
24 |
4 |
p. 293-295
3 p.
|
artikel
|
| 12 |
The use of ion-bombardment for plating metal contacts onto semiconductors
|
England, A.A.
|
|
1981
|
24 |
4 |
p. 337-342
6 p.
|
artikel
|
| 13 |
Threshold and subthreshold characteristics theory for a very small buried-channel mosfet using a majority-carrier distribution model
|
Ōmura, Y.
|
|
1981
|
24 |
4 |
p. 301-308
8 p.
|
artikel
|
| 14 |
Transmission electron microscopy observations of low-temperature ion implanted (100) silicon
|
Servidori, M.
|
|
1981
|
24 |
4 |
p. 329-331
3 p.
|
artikel
|
| 15 |
Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infrared
|
Heiblum, Mordehai
|
|
1981
|
24 |
4 |
p. 343-366
24 p.
|
artikel
|
Tijdschrift beschrijving