nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
An experimental and theoretical study of polycrystalline thin film transistor
|
Baudrand, Henri |
|
1981 |
24 |
12 |
p. 1093-1098 6 p. |
artikel |
2 |
Avalanche breakdown voltage of GaAs hyperabrupt junctions
|
Shimizu, Azuma |
|
1981 |
24 |
12 |
p. 1155-1160 6 p. |
artikel |
3 |
Deep centers introduced by argon ion bombardment in n-type silicon
|
Garrido, J. |
|
1981 |
24 |
12 |
p. 1121-1126 6 p. |
artikel |
4 |
Editorial announcement
|
|
|
1981 |
24 |
12 |
p. I- 1 p. |
artikel |
5 |
Effect of emitter recombinations on the open circuit voltage decay of a junction diode
|
Jain, S.C. |
|
1981 |
24 |
12 |
p. 1147-1154 8 p. |
artikel |
6 |
Effect of junction depth on the performance of a diffused n + p silicon solar cell
|
Caleb Dhanasekaran, P. |
|
1981 |
24 |
12 |
p. 1077-1080 4 p. |
artikel |
7 |
Electromigration measuring techniques for grain boundary diffusion activation energy in aluminum
|
Schreiber, H.-U. |
|
1981 |
24 |
12 |
p. 1135-1146 12 p. |
artikel |
8 |
Energy levels and degeneracy ratios for chromium in silicon
|
Kunio Jr., Takemitsu |
|
1981 |
24 |
12 |
p. 1087-1091 5 p. |
artikel |
9 |
Evaluation of the surface photovoltage method of minority-carrier diffusion-length measurement
|
Alam, M.K. |
|
1981 |
24 |
12 |
p. 1117-1119 3 p. |
artikel |
10 |
Fabrication technology of stable Schottky barrier gates for gallium arsenide MESFETS
|
Ida, Masao |
|
1981 |
24 |
12 |
p. 1099-1105 7 p. |
artikel |
11 |
High resolution thermal mapping of microcircuits using nematic liquid crystals
|
Aszódi, G. |
|
1981 |
24 |
12 |
p. 1127-1133 7 p. |
artikel |
12 |
Interface characteristics of Ge3N4-(n-type) GaAs MIS devices
|
Pande, K.P. |
|
1981 |
24 |
12 |
p. 1107-1109 3 p. |
artikel |
13 |
List of contents and author index
|
|
|
1981 |
24 |
12 |
p. i-xii nvt p. |
artikel |
14 |
Numerical simulation of transient processes in 2-D bipolar transistors
|
Polsky, B.S. |
|
1981 |
24 |
12 |
p. 1081-1085 5 p. |
artikel |
15 |
Theory of abrupt heterojunctions in equilibrium
|
Chatterjee, Amitava |
|
1981 |
24 |
12 |
p. 1111-1115 5 p. |
artikel |
16 |
Theory of back surface field silicon solar cells
|
Dhariwal, S.R. |
|
1981 |
24 |
12 |
p. 1161-1165 5 p. |
artikel |