| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A generalised approach to lifetime measurement in pn junction solar cells
|
Dhariwal, S.R.
|
|
1981
|
24 |
10 |
p. 915-927
13 p.
|
artikel
|
| 2 |
Alloyed tin-gold ohmic contacts to n-type indium phosphide
|
Barnes, P.A.
|
|
1981
|
24 |
10 |
p. 907-913
7 p.
|
artikel
|
| 3 |
An analytical approximation for the Fermi-Dirac integral F 3 2 (η)
|
Aymerich-Humet, X.
|
|
1981
|
24 |
10 |
p. 981-982
2 p.
|
artikel
|
| 4 |
A time-dependent numerical model of the insulated-gate field-effect transistor
|
Mock, M.S.
|
|
1981
|
24 |
10 |
p. 959-966
8 p.
|
artikel
|
| 5 |
Characteristics of metal/tunnel-oxide/N/P+ silicon switching devices—I
|
Duncan, K.A.
|
|
1981
|
24 |
10 |
p. 941-948
8 p.
|
artikel
|
| 6 |
Current transport in an ion-implanted diode
|
Pai, Y.P.
|
|
1981
|
24 |
10 |
p. 929-934
6 p.
|
artikel
|
| 7 |
Depletion layer effects in the open-circuit- voltage-decay lifetime measurement
|
Mahan, J.E.
|
|
1981
|
24 |
10 |
p. 989-994
6 p.
|
artikel
|
| 8 |
Depletion widths of the metal-insulator semiconductor (MIS) structure
|
Jen, Chein Wei
|
|
1981
|
24 |
10 |
p. 949-954
6 p.
|
artikel
|
| 9 |
Effect of transverse electric field on nyquist noise
|
Jindal, R.P.
|
|
1981
|
24 |
10 |
p. 905-906
2 p.
|
artikel
|
| 10 |
Electric field dependence of mobility fluctuation 1/f; noise in elemental semiconductors
|
Jindal, R.P.
|
|
1981
|
24 |
10 |
p. 983-984
2 p.
|
artikel
|
| 11 |
Erratum
|
|
|
1981
|
24 |
10 |
p. 999-
1 p.
|
artikel
|
| 12 |
Graphic method of substrate doping determination from C–V characteristics of MIS capacitors
|
Jakubowski, Andrzej
|
|
1981
|
24 |
10 |
p. 985-987
3 p.
|
artikel
|
| 13 |
Macroscopic electron channelling pattern for laser induced recrystallization monitoring
|
Roulet, M.E.
|
|
1981
|
24 |
10 |
p. 955-957
3 p.
|
artikel
|
| 14 |
Modelling electrical behaviour of nonuniform AlSi Schottky diodes
|
Dascalu, D.
|
|
1981
|
24 |
10 |
p. 897-904
8 p.
|
artikel
|
| 15 |
Numerical studies of the charge capacity of surface-channel charge-coupled devices
|
Lavine, J.P.
|
|
1981
|
24 |
10 |
p. 995-998
4 p.
|
artikel
|
| 16 |
Optical requirements for projection lithography
|
Oldham, W.G.
|
|
1981
|
24 |
10 |
p. 975-980
6 p.
|
artikel
|
| 17 |
Photoeffects in common-source and common-drain microwave GaAs MESFET oscillators
|
Sun, H.J.
|
|
1981
|
24 |
10 |
p. 935-940
6 p.
|
artikel
|
| 18 |
Scaling merged single-device-well MOSFETs for very large scale integration
|
Elsaid, M.H.
|
|
1981
|
24 |
10 |
p. 967-973
7 p.
|
artikel
|
| 19 |
The influence of illumination on the majority-carrier quasi-fermi-level in the Schottky-barrier diode
|
Heasell, E.L.
|
|
1981
|
24 |
10 |
p. 889-895
7 p.
|
artikel
|
Tijdschrift beschrijving