| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Announcement
|
|
|
1980
|
23 |
9 |
p. i-
1 p.
|
artikel
|
| 2 |
Application of Monte Carlo techniques to hot carrier diffusion noise calculation in unipolar semiconducting components
|
Zimmermann, J.
|
|
1980
|
23 |
9 |
p. 915-925
11 p.
|
artikel
|
| 3 |
A simple technique for monitoring undercutting in plasma etching
|
Gill, M.D.
|
|
1980
|
23 |
9 |
p. 995-
1 p.
|
artikel
|
| 4 |
A single-frequency approximation for interface-state density determination
|
Hill, W.A.
|
|
1980
|
23 |
9 |
p. 987-993
7 p.
|
artikel
|
| 5 |
A study of diffused bipolar transistors by electron microscopy
|
Bull, C.J.
|
|
1980
|
23 |
9 |
p. 953-966
14 p.
|
artikel
|
| 6 |
Comments on “a note on photocurrents in extrinsic semiconductors”
|
Parrott, J.E.
|
|
1980
|
23 |
9 |
p. 996-997
2 p.
|
artikel
|
| 7 |
Degradation of solar cell performance by areal inhomogeneity
|
Lindholm, F.A.
|
|
1980
|
23 |
9 |
p. 967-971
5 p.
|
artikel
|
| 8 |
Effect of mobile space-charge on the small-signal admittance of DDR silicon IMPATTs at high current densities
|
Sridharan, M.
|
|
1980
|
23 |
9 |
p. 1001-1003
3 p.
|
artikel
|
| 9 |
Effect of non-uniformly doped surface layer on the barrier height of a Schottky contact
|
Roy, S.B.
|
|
1980
|
23 |
9 |
p. 949-952
4 p.
|
artikel
|
| 10 |
Electron transport properties in GaAs at high electric fields
|
Požela, J.
|
|
1980
|
23 |
9 |
p. 927-933
7 p.
|
artikel
|
| 11 |
Improved SERMOSFET process
|
Singh, Awatar
|
|
1980
|
23 |
9 |
p. 1000-1001
2 p.
|
artikel
|
| 12 |
Orientation dependence of breakdown voltage in GaAs
|
Lee, M.H.
|
|
1980
|
23 |
9 |
p. 1007-1009
3 p.
|
artikel
|
| 13 |
Pd/Ge contacts to n-type GaAs
|
Grinolds, H.R.
|
|
1980
|
23 |
9 |
p. 973-985
13 p.
|
artikel
|
| 14 |
The annealing of thin oxides prior to silicon nitride deposition
|
Rutter, P.
|
|
1980
|
23 |
9 |
p. 998-1000
3 p.
|
artikel
|
| 15 |
The diffusion potential of p −-n − junctions
|
van der Ziel, A.
|
|
1980
|
23 |
9 |
p. 997-
1 p.
|
artikel
|
| 16 |
The effect of implant temperature on the electrical characteristics of ion implanted indium phosphide
|
Donnelly, J.P.
|
|
1980
|
23 |
9 |
p. 943-948
6 p.
|
artikel
|
| 17 |
The electrical characteristics of cermet-silicon contacts
|
Lim, G.C.
|
|
1980
|
23 |
9 |
p. 935-941
7 p.
|
artikel
|
| 18 |
Transferred-electron oscillation in n-In0.53Ga0.47As
|
Takeda, Yoshikazu
|
|
1980
|
23 |
9 |
p. 1003-1005
3 p.
|
artikel
|
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