| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Admittance-voltage characteristic of an MOS capacitor formed over p-on-n semiconductor structure
|
Zohta, Yasuhito
|
|
1980
|
23 |
8 |
p. 807-809
3 p.
|
artikel
|
| 2 |
A method for terminating mesh lines in finite difference formulations of the semiconductor device equations
|
Adler, Michael S.
|
|
1980
|
23 |
8 |
p. 845-853
9 p.
|
artikel
|
| 3 |
A molybdenium source, gate and drain metallization system for GaAs MESFET layers grown by molecular beam epitaxy
|
Devlin, W.J.
|
|
1980
|
23 |
8 |
p. 823-829
7 p.
|
artikel
|
| 4 |
Beryllium and zinc behaviour in GaAs and GaAlAs for high concentration solar cells
|
Flores, C.
|
|
1980
|
23 |
8 |
p. 911-913
3 p.
|
artikel
|
| 5 |
Burst noise in phototransistor optical isolators
|
Cook, K.B.
|
|
1980
|
23 |
8 |
p. 811-816
6 p.
|
artikel
|
| 6 |
Characteristics of metal-semiconductor contacts fabricated by the electroless deposition method
|
Datta, A.K.
|
|
1980
|
23 |
8 |
p. 905-907
3 p.
|
artikel
|
| 7 |
Electrical properties of manganese doped Ga1−xInxAs grown by liquid phase epitaxy
|
Phatak, S.B.
|
|
1980
|
23 |
8 |
p. 839-844
6 p.
|
artikel
|
| 8 |
Electrical, Rutherford backscattering and transmission electron microscopy studies of furnace annealed zinc implanted GaAs
|
Kular, S.S.
|
|
1980
|
23 |
8 |
p. 831-838
8 p.
|
artikel
|
| 9 |
Electronic properties of Pb1−x Hg xSSi heterojunctions
|
Sharma, N.C.
|
|
1980
|
23 |
8 |
p. 869-873
5 p.
|
artikel
|
| 10 |
Impact ionization by electrons and holes in InP
|
Chung-Whei Kao,
|
|
1980
|
23 |
8 |
p. 881-891
11 p.
|
artikel
|
| 11 |
Laser annealing effects on the electrical characteristics of SOS transistors
|
Yaron, Giora
|
|
1980
|
23 |
8 |
p. 893-904
12 p.
|
artikel
|
| 12 |
Laser annealing of ainc implanted GaAs
|
Kular, S.S.
|
|
1980
|
23 |
8 |
p. 875-880
6 p.
|
artikel
|
| 13 |
MOS device fabrication using sputter-deposited gate oxide and polycrystalline silicon layers
|
Haberle, K.
|
|
1980
|
23 |
8 |
p. 855-862
8 p.
|
artikel
|
| 14 |
Real-space electron transfer by thermionic emission in GaAsAlxGa1−xAs heterostructures: Analytical model for large layer widths
|
Shichijo, H.
|
|
1980
|
23 |
8 |
p. 817-822
6 p.
|
artikel
|
| 15 |
Surface states at the nGaAsSiO2 interface from conductance and capacitance measurements
|
Streever, R.L.
|
|
1980
|
23 |
8 |
p. 863-868
6 p.
|
artikel
|
| 16 |
The appearance of a negative conductance at the substrate of a MOSFET exhibiting channel avalanching
|
Rucker, L.M.
|
|
1980
|
23 |
8 |
p. 909-910
2 p.
|
artikel
|
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