| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A d.c. model for an MOS-transistor in the saturation region
|
Poorter, Teunis
|
|
1980
|
23 |
7 |
p. 765-772
8 p.
|
article
|
| 2 |
Anomalous I-V and burst noise characteristics associated with surface channels in an NPN integrated transistor
|
Knott, K.F.
|
|
1980
|
23 |
7 |
p. 727-733
7 p.
|
article
|
| 3 |
A simple method for predicting the forward blocking gain of gridded field effect devices with rectangular grids
|
Adler, M.S.
|
|
1980
|
23 |
7 |
p. 735-740
6 p.
|
article
|
| 4 |
Dependence of minority carrier bulk generation in silicon MOS structures on HCl concentration in an oxidizing ambient
|
Esqueda, Paul D.
|
|
1980
|
23 |
7 |
p. 741-746
6 p.
|
article
|
| 5 |
Electrochemically deposited Schottky contacts of In, Cd and InCd alloy
|
Mitra, R.N.
|
|
1980
|
23 |
7 |
p. 793-795
3 p.
|
article
|
| 6 |
1/f noise and velocity saturation in punch-through diodes
|
van de Roer, Th.G.
|
|
1980
|
23 |
7 |
p. 695-701
7 p.
|
article
|
| 7 |
Ga
1-x
Al
x
As band structure from I-V, C-V measurements on Schottky diodes
|
Diligenti, A.
|
|
1980
|
23 |
7 |
p. 799-800
2 p.
|
article
|
| 8 |
IGFET hot electron emission model
|
Narita, Koziro
|
|
1980
|
23 |
7 |
p. 721-725
5 p.
|
article
|
| 9 |
Improvement of crystalline quality of epitaxial silicon-on-sapphire by ion implantation and furnace regrowth
|
Golecki, I.
|
|
1980
|
23 |
7 |
p. 803-806
4 p.
|
article
|
| 10 |
Interpretation of exponential type drain characteristics of the static induction transistor
|
Płotka, Piotr
|
|
1980
|
23 |
7 |
p. 693-694
2 p.
|
article
|
| 11 |
Isothermal and non-isothermal C-V trap measurements—A critical comparison
|
Lau, F.
|
|
1980
|
23 |
7 |
p. 703-713
11 p.
|
article
|
| 12 |
L.F. noise related to burst noise
|
Knott, K.F.
|
|
1980
|
23 |
7 |
p. 795-796
2 p.
|
article
|
| 13 |
Multiple buried channel charge-coupled device
|
Chakravarti, S.N.
|
|
1980
|
23 |
7 |
p. 747-753
7 p.
|
article
|
| 14 |
Origin of high electronic current density in anodic oxidation of Si
|
Jain, G.C.
|
|
1980
|
23 |
7 |
p. 801-802
2 p.
|
article
|
| 15 |
Photoelectric properties of Zn3P2
|
Pawlikowski, Janusz M.
|
|
1980
|
23 |
7 |
p. 755-758
4 p.
|
article
|
| 16 |
Ramp recovery in p-i-n diodes
|
Berz, F.
|
|
1980
|
23 |
7 |
p. 783-792
10 p.
|
article
|
| 17 |
The a.c. admittance of the p-n PbSSi heterojunction
|
Steckl, A.J.
|
|
1980
|
23 |
7 |
p. 715-720
6 p.
|
article
|
| 18 |
The influence of Cr on the mobility of electrons in GaAs FETs
|
Debney, B.T.
|
|
1980
|
23 |
7 |
p. 773-781
9 p.
|
article
|
| 19 |
Thermal emission rates and capture cross sections of majority carriers at vanadium centers in silicon
|
Ohta, Eiji
|
|
1980
|
23 |
7 |
p. 759-764
6 p.
|
article
|
Journal description