| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A D.C. to 16 GHz indium phosphide MISFET
|
Messick, L.
|
|
1980
|
23 |
6 |
p. 551-555
5 p.
|
artikel
|
| 2 |
A low-high-junction solar-cell model developed for use in tandem cell analysis
|
McPartland, Richard J.
|
|
1980
|
23 |
6 |
p. 605-610
6 p.
|
artikel
|
| 3 |
Analysis of Hall-plate shaped Van der Pauw structures
|
Versnel, W.
|
|
1980
|
23 |
6 |
p. 557-563
7 p.
|
artikel
|
| 4 |
A study of the conduction properties of a rectifying nGaAs-n(Ga, Al)As heterojunction
|
Chandra, Amitabh
|
|
1980
|
23 |
6 |
p. 599-603
5 p.
|
artikel
|
| 5 |
A UMOS power field effect transistor
|
Smith, David A.
|
|
1980
|
23 |
6 |
p. 687-692
6 p.
|
artikel
|
| 6 |
Circuit effects in time-of-flight diffusivity measurements
|
Glisson, T.H.
|
|
1980
|
23 |
6 |
p. 627-630
4 p.
|
artikel
|
| 7 |
Electrical and structural properties of cadmium selenide thin film transistors
|
Lee, M.J.
|
|
1980
|
23 |
6 |
p. 671-679
9 p.
|
artikel
|
| 8 |
Electrical switching in single crystal VO2
|
Mansingh, Abhai
|
|
1980
|
23 |
6 |
p. 649-654
6 p.
|
artikel
|
| 9 |
Electric field and impurity concentration effects on the ionization energy of impurities. Application to acceptors in ZnTe
|
Pautrat, J.L.
|
|
1980
|
23 |
6 |
p. 661-670
10 p.
|
artikel
|
| 10 |
Excess concentration, electron and hole currents in an epitaxial emitter
|
Koerselman, Henk
|
|
1980
|
23 |
6 |
p. 681-686
6 p.
|
artikel
|
| 11 |
Frequency response of charge transfer in MOS inversion layers
|
Lieneweg, Udo
|
|
1980
|
23 |
6 |
p. 577-583
7 p.
|
artikel
|
| 12 |
Light generation in diffused GaP light emitting diodes (LEDs)
|
Thomas, B.W.
|
|
1980
|
23 |
6 |
p. 611-619
9 p.
|
artikel
|
| 13 |
On the forward current-voltage characteristics of p +-n-n + (n +-p-p +) epitaxial diodes
|
Wu, Ching-Yuan
|
|
1980
|
23 |
6 |
p. 641-647
7 p.
|
artikel
|
| 14 |
On the physics and modeling of small semiconductor devices—I
|
Barker, J.R.
|
|
1980
|
23 |
6 |
p. 519-530
12 p.
|
artikel
|
| 15 |
On the physics and modeling of small semiconductor devices—II
|
Barker, J.R.
|
|
1980
|
23 |
6 |
p. 531-544
14 p.
|
artikel
|
| 16 |
On the physics and modeling of small semiconductor devices—III
|
Ferry, D.K.
|
|
1980
|
23 |
6 |
p. 545-549
5 p.
|
artikel
|
| 17 |
Power losses and optimum operation conditions of silicon quasi-Read diodes
|
Chang, Mau-Chung
|
|
1980
|
23 |
6 |
p. 621-626
6 p.
|
artikel
|
| 18 |
Scanning light spot analysis of faulty solar cells
|
Lehovec, K.
|
|
1980
|
23 |
6 |
p. 565-576
12 p.
|
artikel
|
| 19 |
Temperature dependence of threshold current for a quantum-well heterostructure laser
|
Hess, K.
|
|
1980
|
23 |
6 |
p. 585-589
5 p.
|
artikel
|
| 20 |
The characteristics of an enhancement mode VFET
|
Mok, T.D.
|
|
1980
|
23 |
6 |
p. 631-633
3 p.
|
artikel
|
| 21 |
The influences of traps on the generation-recombination current in silicon diodes
|
Lee, K.
|
|
1980
|
23 |
6 |
p. 655-660
6 p.
|
artikel
|
| 22 |
Theory of lifetime measurements in thin semiconductor layers with the scanning electron microscope; transient analysis
|
Jakubowicz, A.
|
|
1980
|
23 |
6 |
p. 635-639
5 p.
|
artikel
|
| 23 |
Thermal degeneration of Mo and Pt silicon Schottky diodes
|
Calleja, E.
|
|
1980
|
23 |
6 |
p. 591-598
8 p.
|
artikel
|
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