| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A general formulation of the parameters of the equivalent circuit model of the IGFET—II
|
El-Mansy, Y.A.
|
|
1980
|
23 |
5 |
p. 411-414
4 p.
|
artikel
|
| 2 |
A general four-terminal charging-current model for the insulated-gate field-effect transistor—I
|
Robinson, Jennifer A.
|
|
1980
|
23 |
5 |
p. 405-410
6 p.
|
artikel
|
| 3 |
An accurate analysis of noise in rectangular bipolar transistors including current crowding
|
Blasquez, G.
|
|
1980
|
23 |
5 |
p. 423-431
9 p.
|
artikel
|
| 4 |
An automatic smoothing algorithm for the calculation of impurity concentration from sheet resistivity and sheet hall coefficient data
|
Hill, Anthony C.
|
|
1980
|
23 |
5 |
p. 491-496
6 p.
|
artikel
|
| 5 |
A proposed model of MISS composed of two active devices
|
Adan, Armando
|
|
1980
|
23 |
5 |
p. 449-456
8 p.
|
artikel
|
| 6 |
Avalanche injection in MNOS gate controlled diodes
|
Rutter, Phillip
|
|
1980
|
23 |
5 |
p. 441-446
6 p.
|
artikel
|
| 7 |
Calculation of the free carrier density profile in a semiconductor near an ohmic contact
|
Chandra, Amitabh
|
|
1980
|
23 |
5 |
p. 516-517
2 p.
|
artikel
|
| 8 |
Capacitance voltage characterization of poly SiSiO2Si structures
|
Yaron, Giora
|
|
1980
|
23 |
5 |
p. 433-439
7 p.
|
artikel
|
| 9 |
Determination of minority carrier lifetime and surface generation velocity by hysteresis pulsed C-V method
|
Kaplan, G.
|
|
1980
|
23 |
5 |
p. 513-514
2 p.
|
artikel
|
| 10 |
Effect of titanium, copper and iron on silicon solar cells
|
Rohatgi, A.
|
|
1980
|
23 |
5 |
p. 415-422
8 p.
|
artikel
|
| 11 |
Electromigration mechanism in aluminium conductors
|
von Staszewski, G.M.
|
|
1980
|
23 |
5 |
p. 481-485
5 p.
|
artikel
|
| 12 |
Generation and external current in MOS capacitors
|
Lubberts, G.
|
|
1980
|
23 |
5 |
p. 507-509
3 p.
|
artikel
|
| 13 |
Low resistance ohmic contacts containing Sb to GaP
|
Itoh, M.
|
|
1980
|
23 |
5 |
p. 447-448
2 p.
|
artikel
|
| 14 |
Multiplication effects in polysilicon MIS diodes
|
Adán, A.
|
|
1980
|
23 |
5 |
p. 515-516
2 p.
|
artikel
|
| 15 |
Resonant tunneling in MIM structures
|
Leipold, W.C.
|
|
1980
|
23 |
5 |
p. 507-
1 p.
|
artikel
|
| 16 |
Reverse avalanche breakdown in gated diodes
|
Colak, Sel
|
|
1980
|
23 |
5 |
p. 467-472
6 p.
|
artikel
|
| 17 |
Reversible breakdown voltage collapse in silicon gate-controlled diodes
|
Rusu, A.
|
|
1980
|
23 |
5 |
p. 473-480
8 p.
|
artikel
|
| 18 |
Specific contact resistance using a circular transmission line model
|
Reeves, G.K.
|
|
1980
|
23 |
5 |
p. 487-490
4 p.
|
artikel
|
| 19 |
The effects of phosphorus diffusion cooling rate on I2L gain
|
Morris, Bernard L.
|
|
1980
|
23 |
5 |
p. 457-465
9 p.
|
artikel
|
| 20 |
The negative differential resistance and the slope equation of a thyristor
|
Wei, David T.Y.
|
|
1980
|
23 |
5 |
p. 509-513
5 p.
|
artikel
|
| 21 |
Theory of switching in p-n-insulator (tunnel)-metal devices—II: Avalanche mode
|
Habib, S.E-D.
|
|
1980
|
23 |
5 |
p. 497-505
9 p.
|
artikel
|
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