| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Annealing of SiSiO2 interface states using Ar-ion-implant-damage-gettering
|
Golja, B.
|
|
1980
|
23 |
12 |
p. 1249-1254
6 p.
|
artikel
|
| 2 |
A simple model of the threshold voltage of short and narrow channel MOSFETs
|
Merckel, Gérard
|
|
1980
|
23 |
12 |
p. 1207-1213
7 p.
|
artikel
|
| 3 |
Comparison of spreading resistance correction factor algorithms using model data
|
Albers, John
|
|
1980
|
23 |
12 |
p. 1197-1205
9 p.
|
artikel
|
| 4 |
Comparison of Thai's theory with experimental boron doping profiles in silicon, diffused from boron nitride sources
|
Frohmader, K.P.
|
|
1980
|
23 |
12 |
p. 1263-1265
3 p.
|
artikel
|
| 5 |
Current gain of high-low junction emitter bipolar transistor structure with uniformly doped profiles
|
Wu, Ching-Yuan
|
|
1980
|
23 |
12 |
p. 1215-1221
7 p.
|
artikel
|
| 6 |
Electric measurement of impurity concentration in p-type epitaxially grown and ion-implanted base regions
|
Incecik, A.Z.
|
|
1980
|
23 |
12 |
p. 1229-1234
6 p.
|
artikel
|
| 7 |
List of contents and author index volume 23, 1980
|
|
|
1980
|
23 |
12 |
p. i-xii
nvt p.
|
artikel
|
| 8 |
Noise in phosphorus-implanted buried channel MOS transistors
|
Liu, S.T.
|
|
1980
|
23 |
12 |
p. 1195-1196
2 p.
|
artikel
|
| 9 |
Noise in phototransistor optical isolators
|
Cook, K.B.
|
|
1980
|
23 |
12 |
p. 1255-1261
7 p.
|
artikel
|
| 10 |
On the separation of quasi-Fermi levels and the boundary conditions for junction devices
|
Marshak, Alan H.
|
|
1980
|
23 |
12 |
p. 1223-1228
6 p.
|
artikel
|
| 11 |
p-i-n diode recovery storage time
|
Slatter, J.A.G.
|
|
1980
|
23 |
12 |
p. 1235-1242
8 p.
|
artikel
|
| 12 |
Study of the TRIM transistor
|
Abu Nailah, S.M.
|
|
1980
|
23 |
12 |
p. 1243-1248
6 p.
|
artikel
|
| 13 |
The optical (free-carrier) absorption of a hole-electron plasma in silicon
|
Horwitz, C.M.
|
|
1980
|
23 |
12 |
p. 1191-1194
4 p.
|
artikel
|
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