| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical expressions for tunnel currents in metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures in a two-band model
|
Habib, S.E.D.
|
|
1980
|
23 |
1 |
p. 87-92
6 p.
|
artikel
|
| 2 |
A UHF MOS tetrode with polysilicon gate
|
Klaassen, F.M.
|
|
1980
|
23 |
1 |
p. 23-30
8 p.
|
artikel
|
| 3 |
Characteristics of metal-semiconductor diodes made by a chemical reduction process
|
Datta, A.K.
|
|
1980
|
23 |
1 |
p. 99-100
2 p.
|
artikel
|
| 4 |
Charge neutrality and the internal electric field produced by impurity diffusion
|
Shrivastava, Ritu
|
|
1980
|
23 |
1 |
p. 73-74
2 p.
|
artikel
|
| 5 |
Design considerations for planar Schottky barrier diodes
|
Kellner, W.
|
|
1980
|
23 |
1 |
p. 9-15
7 p.
|
artikel
|
| 6 |
Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy
|
Englert, Th.
|
|
1980
|
23 |
1 |
p. 31-33
3 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
1980
|
23 |
1 |
p. IFC-
1 p.
|
artikel
|
| 8 |
Extensions of the Scharfetter-Gummel approach to charge transfer
|
Lavine, J.P.
|
|
1980
|
23 |
1 |
p. 75-77
3 p.
|
artikel
|
| 9 |
Generalized theory and realization of a voltage-controlled negative resistance MOS device (lambda MOSFET)
|
Wu, Ching-Yuan
|
|
1980
|
23 |
1 |
p. 1-7
7 p.
|
artikel
|
| 10 |
Interpretation of C-V measurements for determining the doping profile in semiconductors
|
Baccarani, G.
|
|
1980
|
23 |
1 |
p. 65-71
7 p.
|
artikel
|
| 11 |
Metallurgical and electrical properties of chromium silicon interfaces
|
Martinez, A.
|
|
1980
|
23 |
1 |
p. 55-64
10 p.
|
artikel
|
| 12 |
New types of metal-insulator-semiconductor switch
|
Adán, Armando
|
|
1980
|
23 |
1 |
p. 17-21
5 p.
|
artikel
|
| 13 |
Optically active interface states in MOS structures
|
Kamieniecki, E.
|
|
1980
|
23 |
1 |
p. 79-85
7 p.
|
artikel
|
| 14 |
Radiation induced traps of zinc phosphate and phosphide
|
Murali, K.R.
|
|
1980
|
23 |
1 |
p. 93-98
6 p.
|
artikel
|
| 15 |
Recombination in the space-charge region of Schottky barrier solar cells
|
Panayotatos, P.
|
|
1980
|
23 |
1 |
p. 41-47
7 p.
|
artikel
|
| 16 |
The Shockley-like equations for the carrier densities and the current flows in materials with a nonuniform composition
|
van Vliet, Karel M.
|
|
1980
|
23 |
1 |
p. 49-53
5 p.
|
artikel
|
| 17 |
Velocity of surface carriers in inversion layers on silicon
|
Coen, R.W.
|
|
1980
|
23 |
1 |
p. 35-40
6 p.
|
artikel
|
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