| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Achieving long-term and short-term synaptic plasticity in adaptive ANNs: A memristor circuit design with switchable dual-mode
|
Jin, Yanliang
|
|
|
228 |
C |
p.
|
artikel
|
| 2 |
Adaptive body biasing technique based digital LDO regulator for transient response improvement
|
Tripathi, Kartikay Mani
|
|
|
228 |
C |
p.
|
artikel
|
| 3 |
Cobalt-doped zinc sulfide quantum dot thin films for next-generation electronic devices: Synthesis, characterization, and switching properties
|
Sharma, Omkar
|
|
|
228 |
C |
p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
|
228 |
C |
p.
|
artikel
|
| 5 |
Epitaxial p+pn+ vertical short diodes for microbolometers
|
Kubica, R.M.R.
|
|
|
228 |
C |
p.
|
artikel
|
| 6 |
Evaluation of the effective channel length of Junctionless nanowire transistors with different drain bias through the gate capacitance
|
Silva, Everton M.
|
|
|
228 |
C |
p.
|
artikel
|
| 7 |
Excimer laser annealing of boron thin-films to fabricate large-area low-defect p+ Si regions
|
Hassan, Vinayak V.
|
|
|
228 |
C |
p.
|
artikel
|
| 8 |
Implementation and investigation of high voltage CMOS device in advanced Sub-90 nm node processes
|
Huang, Xin
|
|
|
228 |
C |
p.
|
artikel
|
| 9 |
Interface roughness in Resonant Tunnelling Diodes for physically unclonable functions
|
Acharya, Pranav
|
|
|
228 |
C |
p.
|
artikel
|
| 10 |
Investigation into the impact of source-drain series resistance on electrical parameters of AlGaN/GaN high electron mobility transistors
|
Panzo, Eduardo Canga
|
|
|
228 |
C |
p.
|
artikel
|
| 11 |
Investigation on the performance limits of Dirac-source FETs
|
Ugolini, Tommaso
|
|
|
228 |
C |
p.
|
artikel
|
| 12 |
Machine learning impassioned assessment of trap states driven band bending analysis in organic Schottky formation
|
Chakraborty, Kushal
|
|
|
228 |
C |
p.
|
artikel
|
| 13 |
Nanowire behavior under the influence of Polyoxometalates: A Comparative study of depletion and enhancement modes
|
Dixit, Ankit
|
|
|
228 |
C |
p.
|
artikel
|
| 14 |
Operation of junctionless nanowire transistors down to 4.2 Kelvin
|
Bergamaschi, F.E.
|
|
|
228 |
C |
p.
|
artikel
|
| 15 |
Optimizing unconventional trilayer SOTs for field-free switching
|
Jørstad, Nils Petter
|
|
|
228 |
C |
p.
|
artikel
|
| 16 |
Preliminary results on industrial 28nm FD-SOI phase change memory at cryogenic temperature
|
Galy, Philippe
|
|
|
228 |
C |
p.
|
artikel
|
| 17 |
Rigorous analysis on the operating mechanism of gate-injection ferroelectric flash
|
Jeon, Yelim
|
|
|
228 |
C |
p.
|
artikel
|
| 18 |
Studies on resistive switching mechanisms in RRAM memory structures based on copper (II) oxide
|
Ozga, M.
|
|
|
228 |
C |
p.
|
artikel
|
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