| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analog behavior of V-FET operating in forward and reverse mode
|
Silva, V.C.P.
|
|
|
225 |
C |
p.
|
artikel
|
| 2 |
A planar core-shell junctionless transistor compatible with FD-SOI Technology
|
Yan, Yu
|
|
|
225 |
C |
p.
|
artikel
|
| 3 |
A review of hafnium-based ferroelectrics for advanced computing
|
Xu, Xiangdong
|
|
|
225 |
C |
p.
|
artikel
|
| 4 |
Balancing carrier injection/transport through CN-modification on classical hole-transport host for enhanced performance in phosphorescent OLEDs
|
Tao, Yeting
|
|
|
225 |
C |
p.
|
artikel
|
| 5 |
Boosting the capacity of driving the drain current of the FinFET by a simple changing of the CMOS ICs manufacturing process
|
Gimenez, Salvador Pinillos
|
|
|
225 |
C |
p.
|
artikel
|
| 6 |
3D (micro/nano) CdO/p-Si co-doped Zn and La heterojunctions perform as solar light photodetectors
|
Gozeh, Bestoon Anwer
|
|
|
225 |
C |
p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
|
225 |
C |
p.
|
artikel
|
| 8 |
Gold nanoparticles in P3HT: PCBM active layer: A simulation of new organic solar cell designs
|
Benaya, Noureddine
|
|
|
225 |
C |
p.
|
artikel
|
| 9 |
Heat-path layout technique for thermal mitigation in advanced CMOS technologies
|
Jin, Minhyun
|
|
|
225 |
C |
p.
|
artikel
|
| 10 |
Improvement of gate oxide breakdown through STI structure Modification in DRAM
|
Park, Dong-Sik
|
|
|
225 |
C |
p.
|
artikel
|
| 11 |
Improving cell current in 3D NAND flash memory with fixed oxide charge
|
Kim, Yeeun
|
|
|
225 |
C |
p.
|
artikel
|
| 12 |
Influence of substrate temperature on the electrical and photovoltaic properties of V2O5 modified n-Ge heterojunction
|
Thomas, Henry
|
|
|
225 |
C |
p.
|
artikel
|
| 13 |
Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K
|
Tahiat, A.
|
|
|
225 |
C |
p.
|
artikel
|
| 14 |
Low cost Ni-based electrodeposited pn-junction thermoelectric device for thermoelectric sensor application
|
Banupriya, L.
|
|
|
225 |
C |
p.
|
artikel
|
| 15 |
Novel Y-function methodology parameter estimation from weak to strong inversion operation
|
Tahiat, A.
|
|
|
225 |
C |
p.
|
artikel
|
| 16 |
Resistive Switching phenomenon in FD-SOI Ω-Gate FETs: Transistor performance recovery and back gate bias influence
|
Valdivieso, C.
|
|
|
225 |
C |
p.
|
artikel
|
| 17 |
Revealing switching statistics and artificial synaptic properties of Bi2S3 memristor
|
Terdalkar, Priya
|
|
|
225 |
C |
p.
|
artikel
|
| 18 |
Si/Ge 1 − x Sn x /Si transistors with highly transparent Al contacts
|
Wind, Lukas
|
|
|
225 |
C |
p.
|
artikel
|
| 19 |
Some considerations about Lambert W function-based nanoscale MOSFET charge control modeling
|
Ortiz-Conde, A.
|
|
|
225 |
C |
p.
|
artikel
|
| 20 |
Towards efficient and stable deep blue-light-emitting devices by employing HAT-CN doped TFB-x as the hole injection material
|
Xie, Liuping
|
|
|
225 |
C |
p.
|
artikel
|
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