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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
7 results found
| no | title | author | magazine | year | volume | issue | page(s) | type |
| 1 | A unified explicit charge-based capacitance model for metal oxide thin-film transistors |
Li, Fei-fan |
|
219 | C |
p. |
article |
|
| 2 | Determination of source series resistances for InP HEMT under normal bias condition |
Zhang, Ao |
|
219 | C |
p. |
article |
|
| 3 | Editorial Board |
|
219 | C |
p. |
article |
||
| 4 | Editorial “Selected papers from the international conference on simulation of semiconductor processes and devices 2022” |
Gamiz, Francisco |
|
219 | C |
p. |
article |
|
| 5 | Proposed equivalent circuit physics-based model of InP based double heterojunction bipolar transistors |
Liu, Tao |
|
219 | C |
p. |
article |
|
| 6 | Study of ISFET for KCl sensing |
Duarte, Pedro H. |
|
219 | C |
p. |
article |
|
| 7 | Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime |
Cho, Yongjun |
|
219 | C |
p. |
article |
7 results found