| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the interaction of an electron beam with a solar cell—II
|
von Roos, Oldwig
|
|
1978
|
21 |
9 |
p. 1101-1108
8 p.
|
artikel
|
| 2 |
A technique for producing polysilicon patterns with bevelled edge profiles using wet etching
|
Boxall, B.A.
|
|
1978
|
21 |
9 |
p. 1173-1174
2 p.
|
artikel
|
| 3 |
Avalanche diode structures suitable for microwave-optical interactions
|
Schweighart, A.
|
|
1978
|
21 |
9 |
p. 1119-1121
3 p.
|
artikel
|
| 4 |
Charge distributions in silicon nitride of MNOS devices
|
Endo, N.
|
|
1978
|
21 |
9 |
p. 1153-1156
4 p.
|
artikel
|
| 5 |
Differential equation solutions of MOS transmission line models generalized to lossy cases
|
McNutt, M.J.
|
|
1978
|
21 |
9 |
p. 1145-1148
4 p.
|
artikel
|
| 6 |
Effect of temperature on Baritt diode large signal performance
|
Karasek, Miroslav
|
|
1978
|
21 |
9 |
p. 1179-1181
3 p.
|
artikel
|
| 7 |
Experimental response of MOS devices to a fast linear voltage ramp
|
Board, K.
|
|
1978
|
21 |
9 |
p. 1157-1162
6 p.
|
artikel
|
| 8 |
GaAs-MOS capacitor with native oxide film anodized in nonaqueous electrolyte
|
Shimano, A.
|
|
1978
|
21 |
9 |
p. 1149-1152
4 p.
|
artikel
|
| 9 |
Inconsistencies in the original form of the fletcher boundary conditions
|
Nussbaum, Allen
|
|
1978
|
21 |
9 |
p. 1178-1179
2 p.
|
artikel
|
| 10 |
Linearized output stage for SCCDs using a highly doped region
|
Klar, H.
|
|
1978
|
21 |
9 |
p. 1183-1186
4 p.
|
artikel
|
| 11 |
Metal-N-type semiconductor ohmic contact with a shallow N + surface layer
|
Popović, R.S.
|
|
1978
|
21 |
9 |
p. 1133-1138
6 p.
|
artikel
|
| 12 |
Noise due to donors in n-channel silicon JFETs
|
Kim, S.K.
|
|
1978
|
21 |
9 |
p. 1099-1100
2 p.
|
artikel
|
| 13 |
On the analysis of pulsed MOS capacitance measurement
|
Rabbani, K.S.
|
|
1978
|
21 |
9 |
p. 1171-1173
3 p.
|
artikel
|
| 14 |
Photocapacitance of deep levels in GaAs:Cr and GaAs:O
|
Vasudev, Prahalad K.
|
|
1978
|
21 |
9 |
p. 1095-1098
4 p.
|
artikel
|
| 15 |
Photocurrent loss within the depletion region of polycrystalline solar cells
|
Green, Martin A.
|
|
1978
|
21 |
9 |
p. 1139-1144
6 p.
|
artikel
|
| 16 |
Silicon carbide blue-emitting diodes produced by liquid-phase epitaxy
|
v. Münch, W.
|
|
1978
|
21 |
9 |
p. 1129-1132
4 p.
|
artikel
|
| 17 |
The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon
|
Li, Sheng S.
|
|
1978
|
21 |
9 |
p. 1109-1117
9 p.
|
artikel
|
| 18 |
The early voltage of a lateral PNP transistor
|
Malhi, S.D.S.
|
|
1978
|
21 |
9 |
p. 1187-1190
4 p.
|
artikel
|
| 19 |
The effects of finite contact energy barriers and traps on space-charge-limited currents in thin insulators
|
Edwards, D.A.
|
|
1978
|
21 |
9 |
p. 1163-1170
8 p.
|
artikel
|
| 20 |
The fluctuations of the returning carriers current of the reverse biased p-n junction
|
Jevtić, M.M.
|
|
1978
|
21 |
9 |
p. 1174-1177
4 p.
|
artikel
|
| 21 |
The use of a four-point probe for profiling sub-micron layers
|
Huang, R.S.
|
|
1978
|
21 |
9 |
p. 1123-1128
6 p.
|
artikel
|
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