| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An accurate model for a depletion mode IGFET used as a load device
|
Rao, G.R.Mohan
|
|
1978
|
21 |
5 |
p. 711-714
4 p.
|
artikel
|
| 2 |
Analysis of generation in space charge regions of solar cells
|
Pauwels, H.J.
|
|
1978
|
21 |
5 |
p. 775-779
5 p.
|
artikel
|
| 3 |
Analysis of the deep depletion MOSFET and the use of the d.c. characteristics for determining bulk-channel charge-coupled device parameters
|
Haken, Roger A.
|
|
1978
|
21 |
5 |
p. 753-761
9 p.
|
artikel
|
| 4 |
An exact derivation of contact resistance to planar devices
|
Schuldt, S.B.
|
|
1978
|
21 |
5 |
p. 715-719
5 p.
|
artikel
|
| 5 |
Computer calculations of the photoresponse of a diffused silicon pn-junction using the Gummel-de-Mari algorithm
|
Janney, R.
|
|
1978
|
21 |
5 |
p. 796-798
3 p.
|
artikel
|
| 6 |
Crystal damage and the properties of implanted p-n junctions in silicon
|
Zandveld, P.
|
|
1978
|
21 |
5 |
p. 721-727
7 p.
|
artikel
|
| 7 |
Entirely diffused vertical channel JFET: Theory and experiment
|
Morenza, J.L.
|
|
1978
|
21 |
5 |
p. 739-746
8 p.
|
artikel
|
| 8 |
Experimental investigations of the current dependence of the base resistance
|
Berbalk, Günter
|
|
1978
|
21 |
5 |
p. 794-796
3 p.
|
artikel
|
| 9 |
Frequency limitations of transferred electron devices related to quality of contacts
|
Eastman, L.F.
|
|
1978
|
21 |
5 |
p. 787-791
5 p.
|
artikel
|
| 10 |
Influence of bandgap narrowing on the performance of silicon n-p solar cells
|
Lauwers, P.
|
|
1978
|
21 |
5 |
p. 747-752
6 p.
|
artikel
|
| 11 |
Noise associated with JFET gate current resulting from avalanching in the channel
|
Rucker, L.M.
|
|
1978
|
21 |
5 |
p. 798-799
2 p.
|
artikel
|
| 12 |
On the ion implantation of the group VI impurities into GaAs
|
Favennec, P.N.
|
|
1978
|
21 |
5 |
p. 705-710
6 p.
|
artikel
|
| 13 |
Polycrystalline silicon p-n junctions
|
Chu, T.L.
|
|
1978
|
21 |
5 |
p. 781-786
6 p.
|
artikel
|
| 14 |
Silicon solar cell designs based on physical behavior in concentrated sunlight
|
Fossum, J.G.
|
|
1978
|
21 |
5 |
p. 729-737
9 p.
|
artikel
|
| 15 |
Solar cell behaviour under variable surface recombination velocity and proposal of a novel structure
|
Luque, Antonio
|
|
1978
|
21 |
5 |
p. 793-794
2 p.
|
artikel
|
| 16 |
Spreading resistance calculations by the use of Gauss-Laguerre quadrature
|
Choo, S.C.
|
|
1978
|
21 |
5 |
p. 769-774
6 p.
|
artikel
|
| 17 |
Thickness and field dependence of defects in silicon dioxide
|
Baglee, D.
|
|
1978
|
21 |
5 |
p. 763-767
5 p.
|
artikel
|
Tijdschrift beschrijving