nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Contact potential of p-Al0.5Ga0.5As/n-GaAs structures
|
Morkoç, H. |
|
1978 |
21 |
4 |
p. 663-664 2 p. |
artikel |
2 |
Dielectric properties and charge storage characteristics of the metal-TiO2-SiO2-Si structure
|
Joh, D.Y. |
|
1978 |
21 |
4 |
p. 685-687 3 p. |
artikel |
3 |
Electrical and photovoltaic characteristics of indium-tin oxide/silicon heterojunctions
|
Thompson, W.G. |
|
1978 |
21 |
4 |
p. 603-608 6 p. |
artikel |
4 |
Erratum
|
|
|
1978 |
21 |
4 |
p. 701- 1 p. |
artikel |
5 |
Influence of an insulating layer on the efficiency of a semiconductor-insulator-semiductor (SIS) heterojunction solar cell
|
Pauwels, H.J. |
|
1978 |
21 |
4 |
p. 693-698 6 p. |
artikel |
6 |
Infrared plasma reflection in p-type GaAs
|
Sobotta, H. |
|
1978 |
21 |
4 |
p. 699-700 2 p. |
artikel |
7 |
Investigation of leakage characteristics of PbSnTes̵bndPbTe inverted heterostructure diodes
|
Wang, C.C. |
|
1978 |
21 |
4 |
p. 625-632 8 p. |
artikel |
8 |
Negative dielectric relaxation of hot electrons in CdTe
|
Nava, F. |
|
1978 |
21 |
4 |
p. 689-692 4 p. |
artikel |
9 |
New equivalent diagram of solar cells (engineering point of view)
|
Slonim, Michael A. |
|
1978 |
21 |
4 |
p. 617-621 5 p. |
artikel |
10 |
Reaction of thin metal films with SiO2 substrates
|
Pretorius, R. |
|
1978 |
21 |
4 |
p. 667-675 9 p. |
artikel |
11 |
Recombination-generation currents in degenerate semiconductors
|
von Roos, Oldwig |
|
1978 |
21 |
4 |
p. 633-636 4 p. |
artikel |
12 |
Resistivity measurement of thin doped semiconductor layers by means of four point-contacts arbitrarily spaced on a circumference of arbitrary radius
|
Hesse, Egbert |
|
1978 |
21 |
4 |
p. 637-641 5 p. |
artikel |
13 |
Small-signal characteristics of a read diode under conditions of field-dependent velocity and finite reverse saturation current
|
Wang, Yen-chu |
|
1978 |
21 |
4 |
p. 609-615 7 p. |
artikel |
14 |
Some general relationships for flicker noise in MOSFETs
|
van der Ziel, A. |
|
1978 |
21 |
4 |
p. 623-624 2 p. |
artikel |
15 |
Steady-state characteristics of three terminal inversion-controlled switches
|
Kroger, Harry |
|
1978 |
21 |
4 |
p. 655-661 7 p. |
artikel |
16 |
Steady-state characteristics of two terminal inversion-controlled switches
|
Kroger, Harry |
|
1978 |
21 |
4 |
p. 643-654 12 p. |
artikel |
17 |
Studies of aluminum Schottky barrier gate annealing on GaAs FET structures
|
Sleger, K. |
|
1978 |
21 |
4 |
p. 677-684 8 p. |
artikel |
18 |
Temperature dependence of f T of silicon double-diffused bipolar transistors
|
Oosaka, Fukunobu |
|
1978 |
21 |
4 |
p. 665-666 2 p. |
artikel |
19 |
The effect of hot spots on the noise characteristic of large-area bipolar transistors
|
Shacter, S.B. |
|
1978 |
21 |
4 |
p. 599-602 4 p. |
artikel |