| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Anisotropic phonon generation in GaAs epilayers and pn junctions
|
Narayanamurti, V.
|
|
1978
|
21 |
11-12 |
p. 1295-1298
4 p.
|
artikel
|
| 2 |
Auger and radiative recombination of acceptor bound excitons in semiconductors
|
Osbourn, G.C.
|
|
1978
|
21 |
11-12 |
p. 1339-1342
4 p.
|
artikel
|
| 3 |
Auger de excitation of a metastable state in GaAs
|
|
|
1978
|
21 |
11-12 |
p. 1617-
1 p.
|
artikel
|
| 4 |
Capture cross-section of neutral gold in silicon
|
|
|
1978
|
21 |
11-12 |
p. 1616-
1 p.
|
artikel
|
| 5 |
Carrier density dependence of Auger recombination
|
Haug, Albert
|
|
1978
|
21 |
11-12 |
p. 1281-1284
4 p.
|
artikel
|
| 6 |
Carrier generation-recombination in the Gunn effect
|
Maksym, P.A.
|
|
1978
|
21 |
11-12 |
p. 1531-1537
7 p.
|
artikel
|
| 7 |
Carrier lifetime measurements from transient electrical photoresponses to laser pulse excitation
|
|
|
1978
|
21 |
11-12 |
p. 1618-
1 p.
|
artikel
|
| 8 |
Carrier recombination and deep levels in PbTe
|
Lischka, K.
|
|
1978
|
21 |
11-12 |
p. 1509-1512
4 p.
|
artikel
|
| 9 |
Deep level profiles at substrate-epitaxial interfaces in gallium phosphide
|
Hamilton, B.
|
|
1978
|
21 |
11-12 |
p. 1513-1517
5 p.
|
artikel
|
| 10 |
Defects induced by one-MeV proton irradiation in gallium arsenide using transient capacitance methods
|
|
|
1978
|
21 |
11-12 |
p. 1616-
1 p.
|
artikel
|
| 11 |
Determination of the exciton energy from electron beam excited luminescence in direct gap semiconductors
|
Sermage, B.
|
|
1978
|
21 |
11-12 |
p. 1361-1363
3 p.
|
artikel
|
| 12 |
Direct gap recombination in germanium at high excitation level and low temperature
|
Klingenstein, Werner
|
|
1978
|
21 |
11-12 |
p. 1371-1374
4 p.
|
artikel
|
| 13 |
Dynamic multiphonon recombination processes
|
|
|
1978
|
21 |
11-12 |
p. 1615-
1 p.
|
artikel
|
| 14 |
Electron-hole droplet condensation in semiconductors: Phase diagrams
|
Reinecke, T.L.
|
|
1978
|
21 |
11-12 |
p. 1385-1388
4 p.
|
artikel
|
| 15 |
Electron-hole plasma luminescence in GaP
|
Bontemps, N.
|
|
1978
|
21 |
11-12 |
p. 1375-1376
2 p.
|
artikel
|
| 16 |
Electron-hole recombination in GaAlAs DH lasers
|
Burkhard, H.
|
|
1978
|
21 |
11-12 |
p. 1551-1556
6 p.
|
artikel
|
| 17 |
Electron recombination between Landau-levels in n-InSb
|
Müller, W.
|
|
1978
|
21 |
11-12 |
p. 1455-1459
5 p.
|
artikel
|
| 18 |
Excess noise sources due to defects in forward biased junctions
|
Blasquez, G.
|
|
1978
|
21 |
11-12 |
p. 1425-1430
6 p.
|
artikel
|
| 19 |
Excitation and recombination of donor-acceptor pairs in ZnTe
|
|
|
1978
|
21 |
11-12 |
p. 1615-
1 p.
|
artikel
|
| 20 |
Exciton localisation at impurity pairs in zinc telluride and indium phosphide
|
Dean, Paul J.
|
|
1978
|
21 |
11-12 |
p. 1351-1355
5 p.
|
artikel
|
| 21 |
Experimental comparison of localized and free carrier Auger recombination in silicon
|
Schmid, Wolfgang
|
|
1978
|
21 |
11-12 |
p. 1285-1287
3 p.
|
artikel
|
| 22 |
Fine structure and Zeeman effect of the excited state of the green emitting copper centre in zinc oxide
|
Broser, Immanuel J.
|
|
1978
|
21 |
11-12 |
p. 1597-1602
6 p.
|
artikel
|
| 23 |
Foreword
|
|
|
1978
|
21 |
11-12 |
p. vii-
1 p.
|
artikel
|
| 24 |
Hot carrier recombination radiation in GaAs diode
|
Inoue, M.
|
|
1978
|
21 |
11-12 |
p. 1527-1530
4 p.
|
artikel
|
| 25 |
Improved analysis of pulsed C-t measurements on silicon MOS capacitors
|
Rabbani, K.S.
|
|
1978
|
21 |
11-12 |
p. 1577-1582
6 p.
|
artikel
|
| 26 |
Influence of dissociation of individual dislocations in silicon into Shockley partials on their carrier recombination efficiency
|
|
|
1978
|
21 |
11-12 |
p. 1617-
1 p.
|
artikel
|
| 27 |
Interaction of E 1 and E 1 + Δ 1 exciton recombination with LO phonons in III-V semiconductors
|
Farrow, Roger L.
|
|
1978
|
21 |
11-12 |
p. 1347-1350
4 p.
|
artikel
|
| 28 |
Lifetime and radiative efficiency vs density in the strain-confined electron-hole liquid in Ge
|
Kelso, Susan M.
|
|
1978
|
21 |
11-12 |
p. 1377-1380
4 p.
|
artikel
|
| 29 |
Life time measurements in PbTe and PbSnTe
|
Schlicht, B.
|
|
1978
|
21 |
11-12 |
p. 1481-1485
5 p.
|
artikel
|
| 30 |
Low temperature recombination into shallow donors in germanium: Transient case
|
Pickin, W.
|
|
1978
|
21 |
11-12 |
p. 1299-1303
5 p.
|
artikel
|
| 31 |
Luminescence decay kinetics in GaP:Bi and GaP:N
|
Sternheim, M.
|
|
1978
|
21 |
11-12 |
p. 1343-1346
4 p.
|
artikel
|
| 32 |
Luminescence excitation spectra of GaP x As1-x :N
|
|
|
1978
|
21 |
11-12 |
p. 1618-
1 p.
|
artikel
|
| 33 |
Measurement of Auger recombination in silicon by laser excitation
|
Svantesson, K.G.
|
|
1978
|
21 |
11-12 |
p. 1603-1608
6 p.
|
artikel
|
| 34 |
Monte Carlo studies of transitions between excited donor states—Resolution
|
Beleznay, F.
|
|
1978
|
21 |
11-12 |
p. 1305-1309
5 p.
|
artikel
|
| 35 |
Multiphonon recombination processes
|
Toyozawa, Yutaka
|
|
1978
|
21 |
11-12 |
p. 1313-1318
6 p.
|
artikel
|
| 36 |
New electronic effects in double injection diodes with one deep level
|
Dudeck, Ingo
|
|
1978
|
21 |
11-12 |
p. 1557-1561
5 p.
|
artikel
|
| 37 |
Non-radiative de-excitation of deep centres
|
Stoneham, A.M.
|
|
1978
|
21 |
11-12 |
p. 1325-1329
5 p.
|
artikel
|
| 38 |
Non uniform recombination in thin silicon-on-sapphire films
|
Cristoloveanu, Sorin
|
|
1978
|
21 |
11-12 |
p. 1563-1569
7 p.
|
artikel
|
| 39 |
On the analytical treatment of Auger recombination in silicon devices at high current density
|
|
|
1978
|
21 |
11-12 |
p. 1615-
1 p.
|
artikel
|
| 40 |
On the multiphonon capture rate in semiconductors
|
Ridley, Brian K.
|
|
1978
|
21 |
11-12 |
p. 1319-1323
5 p.
|
artikel
|
| 41 |
Oxygen-bound exciton recombinations in ZnTeSe
|
|
|
1978
|
21 |
11-12 |
p. 1616-
1 p.
|
artikel
|
| 42 |
Phonon replicas of bound exciton recombination
|
Ungier, W.
|
|
1978
|
21 |
11-12 |
p. 1365-1367
3 p.
|
artikel
|
| 43 |
Photoluminescence in CuGaSe2
|
Vecchi, M.P.
|
|
1978
|
21 |
11-12 |
p. 1609-1612
4 p.
|
artikel
|
| 44 |
Properties of deep Cu levels in GaP
|
Grimmeiss, H.G.
|
|
1978
|
21 |
11-12 |
p. 1505-1508
4 p.
|
artikel
|
| 45 |
Pulsed optically detected resonance in semiconductors
|
Dawson, P.
|
|
1978
|
21 |
11-12 |
p. 1451-1454
4 p.
|
artikel
|
| 46 |
Quantitative investigation of the recombination involving free particle scattering processes in highly excited blend type II–VI compounds
|
Klingshirn, Claus F.
|
|
1978
|
21 |
11-12 |
p. 1357-1360
4 p.
|
artikel
|
| 47 |
Recombination; a survey
|
Mott, N.F.
|
|
1978
|
21 |
11-12 |
p. 1275-1280
6 p.
|
artikel
|
| 48 |
Recombination at deep traps
|
Queisser, Hans J.
|
|
1978
|
21 |
11-12 |
p. 1495-1503
9 p.
|
artikel
|
| 49 |
Recombination at dislocations
|
Figielski, T.
|
|
1978
|
21 |
11-12 |
p. 1403-1412
10 p.
|
artikel
|
| 50 |
Recombination effects in p-type silicon S.B.S.C'S
|
Klimpke, C.M.
|
|
1978
|
21 |
11-12 |
p. 1539-1543
5 p.
|
artikel
|
| 51 |
Recombination enhanced defect reactions
|
Kimerling, L.C.
|
|
1978
|
21 |
11-12 |
p. 1391-1401
11 p.
|
artikel
|
| 52 |
Recombination in cadmium mercury telluride photodetectors
|
Baker, I.M.
|
|
1978
|
21 |
11-12 |
p. 1475-1480
6 p.
|
artikel
|
| 53 |
Recombination in small-gap Pb1−xSnxTe
|
Herrmann, Klaus H.
|
|
1978
|
21 |
11-12 |
p. 1487-1491
5 p.
|
artikel
|
| 54 |
Recombination of hot-electrons
|
van Welzenis, Rob G.
|
|
1978
|
21 |
11-12 |
p. 1591-1595
5 p.
|
artikel
|
| 55 |
Resonant Brillouin scattering phenomena in some II–VI compounds
|
Hamaguchi, C.
|
|
1978
|
21 |
11-12 |
p. 1585-1589
5 p.
|
artikel
|
| 56 |
Resonant Raman scattering versus hot electron effects in excitation spectra of CdTe
|
Nakamura, A.
|
|
1978
|
21 |
11-12 |
p. 1331-1336
6 p.
|
artikel
|
| 57 |
Scanning photocurrent microscopy: A new technique to study inhomogeneously distributed recombination centers in semiconductors
|
Lang, David V.
|
|
1978
|
21 |
11-12 |
p. 1519-1524
6 p.
|
artikel
|
| 58 |
SEM cathodoluminescence studies of dislocation recombination in GaP
|
Dimitriadis, C.A.
|
|
1978
|
21 |
11-12 |
p. 1419-1423
5 p.
|
artikel
|
| 59 |
Spin dependent recombination at dislocations in silicon
|
Neubert, D.
|
|
1978
|
21 |
11-12 |
p. 1445-1450
6 p.
|
artikel
|
| 60 |
Spin orientation by optical pumping in semiconductors
|
Planel, R.
|
|
1978
|
21 |
11-12 |
p. 1437-1444
8 p.
|
artikel
|
| 61 |
The Auger-effect in Hg1−xCdxTe
|
Gerhardts, Rolf R.
|
|
1978
|
21 |
11-12 |
p. 1467-1470
4 p.
|
artikel
|
| 62 |
The effect of single-phonon and plasmon recombination on the lifetime in n-Hg1−x Cd xTe with magnetically tuned bandgap
|
Dornhaus, Ralf
|
|
1978
|
21 |
11-12 |
p. 1471-1474
4 p.
|
artikel
|
| 63 |
The effects of grain boundary and interface recombination on the performance of thin-film solar cells
|
Kazmerski, Lawrence L.
|
|
1978
|
21 |
11-12 |
p. 1545-1550
6 p.
|
artikel
|
| 64 |
The first 70 semiconductor Auger processes
|
Landsberg, P.T.
|
|
1978
|
21 |
11-12 |
p. 1289-1294
6 p.
|
artikel
|
| 65 |
The generation of point defects in GaAs by electron-hole recombination at dislocations
|
Hutchinson, P.W.
|
|
1978
|
21 |
11-12 |
p. 1413-1417
5 p.
|
artikel
|
| 66 |
The magnetic field dependence of luminescence in plasma-deposited amorphous silicon
|
Street, Robert A.
|
|
1978
|
21 |
11-12 |
p. 1461-1463
3 p.
|
artikel
|
| 67 |
Thermodynamical analysis of optimal recombination centers in thyristors
|
Engström, Olof
|
|
1978
|
21 |
11-12 |
p. 1571-1576
6 p.
|
artikel
|
| 68 |
Thermodynamic and spectroscopic measurements of the electron-hole drop binding energy in Ge: An old problem revisited
|
Etienne, Bernard
|
|
1978
|
21 |
11-12 |
p. 1381-1383
3 p.
|
artikel
|
| 69 |
The structure and motion of the self-interstitial in diamond
|
Mainwood, Alison
|
|
1978
|
21 |
11-12 |
p. 1431-1433
3 p.
|
artikel
|
Tijdschrift beschrijving