| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs
|
Han, Hung-Chi
|
|
|
202 |
C |
p.
|
artikel
|
| 2 |
A physics-based TCAD framework for NBTI
|
Tiwari, Ravi
|
|
|
202 |
C |
p.
|
artikel
|
| 3 |
Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis
|
de Lima Silva, Wenita
|
|
|
202 |
C |
p.
|
artikel
|
| 4 |
Design of auto-store circuit for nvSRAM with SONOS access transistor
|
Ko, Woonsan
|
|
|
202 |
C |
p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
|
202 |
C |
p.
|
artikel
|
| 6 |
Impact of thermal coupling effects on the digital and analog figures of merit of UTBB SOI MOSFET pairs
|
Vanbrabant, Martin
|
|
|
202 |
C |
p.
|
artikel
|
| 7 |
Improved ISPP scheme for narrow threshold voltage distribution in 3-D NAND flash memory
|
Yang, Giho
|
|
|
202 |
C |
p.
|
artikel
|
| 8 |
Improved RF power performance of AlGaN/GaN HEMT on silicon with planar distributed channel
|
Chen, Jingxiong
|
|
|
202 |
C |
p.
|
artikel
|
| 9 |
PMOS junction optimization for 3D NAND FLASH memory with CMOS under array
|
Liao, Jeng-Hwa
|
|
|
202 |
C |
p.
|
artikel
|
| 10 |
Quantum element method for multi-dimensional nanostructures enabled by a projection-based learning algorithm
|
Veresko, Martin
|
|
|
202 |
C |
p.
|
artikel
|
| 11 |
Switching limits of top-gated carbon nanotube field-effect transistors
|
Sanchez-Soares, A.
|
|
|
202 |
C |
p.
|
artikel
|
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