| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A computer algorithm for accurate and repeatable profile analysis using anodization and stripping of silicon
|
Plunkett, Joseph C.
|
|
1977
|
20 |
5 |
p. 447-453
7 p.
|
artikel
|
| 2 |
A minority carrier MIS solar cell
|
Pulfrey, D.L.
|
|
1977
|
20 |
5 |
p. 455-457
3 p.
|
artikel
|
| 3 |
Applications of equivalent network methods for multi-level g-r noise spectra
|
Ambrózy, A.
|
|
1977
|
20 |
5 |
p. 463-467
5 p.
|
artikel
|
| 4 |
Chromium thin film as a barrier to the interaction of Pd2Si with Al
|
Olowolafe, J.O.
|
|
1977
|
20 |
5 |
p. 413-415
3 p.
|
artikel
|
| 5 |
Comments on: “Control of relative etch rates of SiO2 and Si in plasma etching”
|
Jacob, Adir
|
|
1977
|
20 |
5 |
p. 479-
1 p.
|
artikel
|
| 6 |
Current-voltage characteristics of GaAs p-i-n and n-i-n diodes
|
Hrivnák, L.
|
|
1977
|
20 |
5 |
p. 417-419
3 p.
|
artikel
|
| 7 |
Current-voltage relation in silicon p-n junctions
|
Dhariwal, S.R.
|
|
1977
|
20 |
5 |
p. 474-476
3 p.
|
artikel
|
| 8 |
Editorial announcement
|
D., W.C.
|
|
1977
|
20 |
5 |
p. I-
1 p.
|
artikel
|
| 9 |
Erratum
|
|
|
1977
|
20 |
5 |
p. 481-
1 p.
|
artikel
|
| 10 |
Extension of Gummel's charge control relation
|
Borrego, J.M.
|
|
1977
|
20 |
5 |
p. 441-442
2 p.
|
artikel
|
| 11 |
GaAs planar gunn devices with sulfur-ion implanted n layers
|
Mizutani, Takashi
|
|
1977
|
20 |
5 |
p. 443-444
2 p.
|
artikel
|
| 12 |
Geometrical magnetoresistance and negative differential mobility in semiconductor devices
|
Shur, Michael
|
|
1977
|
20 |
5 |
p. 389-401
13 p.
|
artikel
|
| 13 |
High temperature annealing behaviour of Schottky barriers on GaAs with gold and gold-gallium contacts
|
Guha, S.
|
|
1977
|
20 |
5 |
p. 431-432
2 p.
|
artikel
|
| 14 |
Investigation of the AuGeNi system used for alloyed contacts to GaAs
|
Wittmer, M.
|
|
1977
|
20 |
5 |
p. 433-436
4 p.
|
artikel
|
| 15 |
Light spot scanner on a gallium arsenide strip
|
Tani, Zenpei
|
|
1977
|
20 |
5 |
p. 469-472
4 p.
|
artikel
|
| 16 |
Measurement of the resistivity of a thin square sample with a square four-probe array
|
Buehler, Martin G.
|
|
1977
|
20 |
5 |
p. 403-406
4 p.
|
artikel
|
| 17 |
Microwave field-effect transistors from sulphur-implanted GaAs
|
Kellner, W.
|
|
1977
|
20 |
5 |
p. 459-460
2 p.
|
artikel
|
| 18 |
On the measurement of the channel potential in charge-coupled-device structures
|
Taylor, G.W.
|
|
1977
|
20 |
5 |
p. 473-474
2 p.
|
artikel
|
| 19 |
On the turn-on behaviour of thyristors with field-initiated gate
|
Glockner, K.H.
|
|
1977
|
20 |
5 |
p. 476-IN12
nvt p.
|
artikel
|
| 20 |
Some investigations on secondary breakdown in p-n junctions considering the effect of thermally generated carriers
|
Zarabi, M.J.
|
|
1977
|
20 |
5 |
p. 407-412
6 p.
|
artikel
|
| 21 |
Two formulations of semiconductor transport equations
|
Landsberg, P.T.
|
|
1977
|
20 |
5 |
p. 421-429
9 p.
|
artikel
|
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