| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A mathematical study of space-charge layer capacitance for an abrupt p-n semiconductor junction
|
Kennedy, D.P.
|
|
1977
|
20 |
4 |
p. 311-319
9 p.
|
artikel
|
| 2 |
A quasi-equilibrium thermally stimulated current process
|
Anderson, J.C.
|
|
1977
|
20 |
4 |
p. 335-342
8 p.
|
artikel
|
| 3 |
Charge storage by irradiation with UV light in non-biased MNOS structures
|
Jacobs, Erwin P.
|
|
1977
|
20 |
4 |
p. 361-365
5 p.
|
artikel
|
| 4 |
Conductivity of complementary error function n-type diffused layers in gallium arsenide
|
Baliga, B.Jayant
|
|
1977
|
20 |
4 |
p. 321-322
2 p.
|
artikel
|
| 5 |
Deionization effect on the evaluation of hole mobility in p-Si
|
Woodley, Thomas J.
|
|
1977
|
20 |
4 |
p. 385-388
4 p.
|
artikel
|
| 6 |
Depleted surface recombination velocity s 0 measurements using “gate-controlled diodes”
|
Pierret, R.F.
|
|
1977
|
20 |
4 |
p. 373-379
7 p.
|
artikel
|
| 7 |
Editorial announcement
|
|
|
1977
|
20 |
4 |
p. I-
1 p.
|
artikel
|
| 8 |
Enhanced anneal behaviour of boron implanted silicon
|
Deval, S.
|
|
1977
|
20 |
4 |
p. 381-382
2 p.
|
artikel
|
| 9 |
Flicker noise theory of diffused and ion implanted resistors
|
Blasquez, G.
|
|
1977
|
20 |
4 |
p. 382-383
2 p.
|
artikel
|
| 10 |
Frequency mixing of acoustic waves in piezoelectric semiconductors
|
Singh, S.P.
|
|
1977
|
20 |
4 |
p. 349-354
6 p.
|
artikel
|
| 11 |
Low noise “ohmic” contacts on n-type silicon
|
Rolland, M.
|
|
1977
|
20 |
4 |
p. 323-331
9 p.
|
artikel
|
| 12 |
Microwave BARITT diode with retarding field—An investigation
|
Eknoyan, O.
|
|
1977
|
20 |
4 |
p. 285-289
5 p.
|
artikel
|
| 13 |
Microwave hot electron effects in semiconductor quantized inversion layers
|
Ferry, D.K.
|
|
1977
|
20 |
4 |
p. 355-359
5 p.
|
artikel
|
| 14 |
Multilayered ion-implanted BARITT diodes with improved efficiency
|
Eknoyan, O.
|
|
1977
|
20 |
4 |
p. 291-295
5 p.
|
artikel
|
| 15 |
Optically induced charge storage in ion implanted SiO2
|
Jacobs, Erwin P.
|
|
1977
|
20 |
4 |
p. 367-372
6 p.
|
artikel
|
| 16 |
Origin of chromatic delay in electroluminescent diodes
|
Mišek, J.
|
|
1977
|
20 |
4 |
p. 333-334
2 p.
|
artikel
|
| 17 |
Realization of high-value dynamic resistors using pn-junctions in the ±4(kT/q) bias range
|
Das, M.B.
|
|
1977
|
20 |
4 |
p. 307-310
4 p.
|
artikel
|
| 18 |
Reduced lateral diffusion and reverse leakage in Be-implanted GaAs1−xPxdiodes
|
Chatterjee, Pallab K.
|
|
1977
|
20 |
4 |
p. 305-306
2 p.
|
artikel
|
| 19 |
Surface states in electroluminescent MIS diodes of zinc selenide
|
Özsan, M.E.
|
|
1977
|
20 |
4 |
p. 343-347
5 p.
|
artikel
|
| 20 |
Theory of transient photovoltaic effects used for measurement of lifetime of carriers in solar cells
|
Dhariwal, S.R.
|
|
1977
|
20 |
4 |
p. 297-304
8 p.
|
artikel
|
| 21 |
The pn-product in silicon
|
Slotboom, J.W.
|
|
1977
|
20 |
4 |
p. 279-283
5 p.
|
artikel
|
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