| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A simple boundary condition at semiconductor-insulating substrate interface of a TFT
|
Smiljanić, M.
|
|
1977
|
20 |
3 |
p. 233-234
2 p.
|
artikel
|
| 2 |
Comments on “The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes”
|
Stareev, G.D.
|
|
1977
|
20 |
3 |
p. 265-
1 p.
|
artikel
|
| 3 |
Correlation coefficient of gate and drain noise at high electric field.
|
|
|
1977
|
20 |
3 |
p. 277-
1 p.
|
artikel
|
| 4 |
Dependence of flicker noise in MOSFETs on geometry
|
van der Ziel, A.
|
|
1977
|
20 |
3 |
p. 267-
1 p.
|
artikel
|
| 5 |
Discrimination between noise sources by modulation techniques
|
|
|
1977
|
20 |
3 |
p. 277-
1 p.
|
artikel
|
| 6 |
Editorial announcement
|
W.C., D.
|
|
1977
|
20 |
3 |
p. I-
1 p.
|
artikel
|
| 7 |
Electron drift velocity in n-GaAs at high electric fields
|
Houston, P.A.
|
|
1977
|
20 |
3 |
p. 197-204
8 p.
|
artikel
|
| 8 |
Frequency response of bulk traps in the metal-oxide-silicon structure under strong-inversion conditions
|
Mar, H.A.
|
|
1977
|
20 |
3 |
p. 241-247
7 p.
|
artikel
|
| 9 |
General solar cell curve factors including the effects of ideality factor, temperature and series resistance
|
Green, Martin A.
|
|
1977
|
20 |
3 |
p. 265-266
2 p.
|
artikel
|
| 10 |
Limitations of Nielsen's and related noise equations applied to microwave bipolar transistors, and a new expression for the frequency and current dependent noise figure
|
Hawkins, R.J.
|
|
1977
|
20 |
3 |
p. 191-196
6 p.
|
artikel
|
| 11 |
Low-dose n-type ion implantation into Cr-doped GaAs substrates
|
Donnelly, J.P.
|
|
1977
|
20 |
3 |
p. 273-276
4 p.
|
artikel
|
| 12 |
Metal p-n Schottky barrier diodes
|
van der Ziel, A.
|
|
1977
|
20 |
3 |
p. 269-272
4 p.
|
artikel
|
| 13 |
Minority carrier recombination in MOS capacitors switched from inversion to accumulation
|
Calzolari, P.U.
|
|
1977
|
20 |
3 |
p. 205-212
8 p.
|
artikel
|
| 14 |
Multiple-energy proton bombardment in n +-GaAs
|
Donnelly, J.P.
|
|
1977
|
20 |
3 |
p. 183-189
7 p.
|
artikel
|
| 15 |
Optimization of recombination levels and their capture cross section in power rectifiers and thyristors
|
Baliga, B.Jayant
|
|
1977
|
20 |
3 |
p. 225-232
8 p.
|
artikel
|
| 16 |
Selenium implantation in GaAs
|
Gamo, K.
|
|
1977
|
20 |
3 |
p. 213-217
5 p.
|
artikel
|
| 17 |
Small-signal response of bulk traps in MNOS devices
|
Chan, K.W.
|
|
1977
|
20 |
3 |
p. 249-254
6 p.
|
artikel
|
| 18 |
Spreading resistance calculations for graded structures based on the uniform flux source boundary condition
|
Leong, M.S.
|
|
1977
|
20 |
3 |
p. 255-264
10 p.
|
artikel
|
| 19 |
Surface charge transport with an MOS-transmission-line
|
Hoffmann, Kurt
|
|
1977
|
20 |
3 |
p. 177-180
4 p.
|
artikel
|
| 20 |
Tellurium implantation in GaAs
|
Eisen, F.H.
|
|
1977
|
20 |
3 |
p. 219-223
5 p.
|
artikel
|
| 21 |
Theoretical analysis of the quantum photoelectric yield in Schottky diodes
|
Lavagna, M.
|
|
1977
|
20 |
3 |
p. 235-240
6 p.
|
artikel
|
| 22 |
The physical significance of the T 0 anomalies in Schottky barriers
|
Crowell, C.R.
|
|
1977
|
20 |
3 |
p. 171-175
5 p.
|
artikel
|
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