| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of simple and numerical two-dimensional models for the threshold voltage of short channel MOSTs
|
Coe, D.J.
|
|
1977
|
20 |
12 |
p. 993-998
6 p.
|
artikel
|
| 2 |
A new short channel MOSFET structure (UMOST)
|
Salama, C.A.T.
|
|
1977
|
20 |
12 |
p. 1003-1009
7 p.
|
artikel
|
| 3 |
A simple small-signal two-port most model for the pre-pinchoff region
|
Kumar, Umesh
|
|
1977
|
20 |
12 |
p. 1021-1022
2 p.
|
artikel
|
| 4 |
Collector junction modeling of planar transistors
|
Bhattacharyya, A.B.
|
|
1977
|
20 |
12 |
p. 977-984
8 p.
|
artikel
|
| 5 |
Density-of-states mass for quantized accumulation layers measured from C-V characteristics
|
Roychoudhury, D.
|
|
1977
|
20 |
12 |
p. 1023-1024
2 p.
|
artikel
|
| 6 |
Experimental studies of switching in metal semi-insulating n-p + silicon devices
|
El-Badry, A.
|
|
1977
|
20 |
12 |
p. 963-966
4 p.
|
artikel
|
| 7 |
Experiments on surface peripheral leakage current of a silicon N+P junction
|
Wang, C.T.
|
|
1977
|
20 |
12 |
p. 967-969
3 p.
|
artikel
|
| 8 |
Gold as an optimal recombination center for power rectifiers and thyristors
|
Dudeck, I.
|
|
1977
|
20 |
12 |
p. 1033-1036
4 p.
|
artikel
|
| 9 |
1 ƒ noise measurements in ion-implanted silicon resistors as a function of the substrate reverse bias voltage
|
Beck, H.G.E.
|
|
1977
|
20 |
12 |
p. 951-954
4 p.
|
artikel
|
| 10 |
Photovoltaic properties of MIS-Schottky barriers
|
Card, H.C.
|
|
1977
|
20 |
12 |
p. 971-976
6 p.
|
artikel
|
| 11 |
Potential and field distribution in high resistivity microresistors and Halltrons for MOS integrated circuits
|
Velchev, N.B.
|
|
1977
|
20 |
12 |
p. 943-949
7 p.
|
artikel
|
| 12 |
Power transistor crystal damage in inductive load switching
|
Gaur, S.P.
|
|
1977
|
20 |
12 |
p. 1026-1027
2 p.
|
artikel
|
| 13 |
Space charge influence on resistivity measurements
|
Kramer, P.
|
|
1977
|
20 |
12 |
p. 1011-1019
9 p.
|
artikel
|
| 14 |
Technological constraints upon the properties of deep levels used for lifetime control in the fabrication of power rectifiers and thyristors
|
Baliga, B.Jayant
|
|
1977
|
20 |
12 |
p. 1029-1032
4 p.
|
artikel
|
| 15 |
The lateral diffusion of boron in polycrystalline silicon and its influence on the fabrication of sub-micron MOSTs
|
Coe, D.J.
|
|
1977
|
20 |
12 |
p. 985-992
8 p.
|
artikel
|
| 16 |
Theory of switching phenomena in metal/semi-insulator/n-p + silicon devices
|
Simmons, J.G.
|
|
1977
|
20 |
12 |
p. 955-961
7 p.
|
artikel
|
| 17 |
The photoeffect in silicon planar positional photon-detectors with a high resistivity doped channel
|
Vassilev, V.S.
|
|
1977
|
20 |
12 |
p. 999-1001
3 p.
|
artikel
|
| 18 |
Zn diffusion in Al0.7Ga0.3As compared with that in GaAs
|
Flat, A.
|
|
1977
|
20 |
12 |
p. 1024-1025
2 p.
|
artikel
|
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