| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A change of etch rate associated with the amorphous to crystalline transition in CVD layers of silicon
|
Boxall, B.A.
|
|
1977
|
20 |
10 |
p. 873-874
2 p.
|
artikel
|
| 2 |
A multilayer correction scheme for spreading resistance measurements
|
Choo, S.C.
|
|
1977
|
20 |
10 |
p. 839-848
10 p.
|
artikel
|
| 3 |
Boron-implanted silicon resistors
|
Ku, S.M.
|
|
1977
|
20 |
10 |
p. 803-812
10 p.
|
artikel
|
| 4 |
Drain-voltage dependence of IGFET turn-on voltage
|
Dang, Luong Mo
|
|
1977
|
20 |
10 |
p. 825-830
6 p.
|
artikel
|
| 5 |
Effect of heat treatment on electron traps in n-type GaAs
|
Subramanian, S.
|
|
1977
|
20 |
10 |
p. 799-802
4 p.
|
artikel
|
| 6 |
Luminescence and crystal damage in ion implanted CdS and ZnO
|
Walsh, D.
|
|
1977
|
20 |
10 |
p. 813-815
3 p.
|
artikel
|
| 7 |
Non-equilibrium response of MOS devices to a linear voltage ramp—I. Bulk discrete traps
|
Board, K.
|
|
1977
|
20 |
10 |
p. 859-867
9 p.
|
artikel
|
| 8 |
Relationship between transient response and output characteristics of avalanche transistors
|
Rein, H.-M.
|
|
1977
|
20 |
10 |
p. 849-858
10 p.
|
artikel
|
| 9 |
Second breakdown in high voltage MOS transistors
|
Krishna, Surinder
|
|
1977
|
20 |
10 |
p. 875-878
4 p.
|
artikel
|
| 10 |
Silicon photodiode as a photosensitive capacitance
|
Stepowicz, Witold J.
|
|
1977
|
20 |
10 |
p. 817-823
7 p.
|
artikel
|
| 11 |
Small signal analysis and optimization of the BARITT diode
|
Yu, S-Y
|
|
1977
|
20 |
10 |
p. 831-837
7 p.
|
artikel
|
| 12 |
Thermionic-field emission through silicon Schottky barriers at room temperature
|
Shannon, J.M.
|
|
1977
|
20 |
10 |
p. 869-872
4 p.
|
artikel
|
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