| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An optimization of semiconductor film thickness in light-controlled microstrip devices
|
Platte, W.
|
|
1977
|
20 |
1 |
p. 57-60
4 p.
|
artikel
|
| 2 |
Computer model and charge transport studies in short gate charge-coupled devices
|
Elsaid, M.H.
|
|
1977
|
20 |
1 |
p. 61-69
9 p.
|
artikel
|
| 3 |
Current transport in narrow-base transistors
|
Baccarani, G.
|
|
1977
|
20 |
1 |
p. 5-10
6 p.
|
artikel
|
| 4 |
Editorial announcement
|
|
|
1977
|
20 |
1 |
p. I-
1 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
1977
|
20 |
1 |
p. IFC-
1 p.
|
artikel
|
| 6 |
Effect of heat treatment on n-type bulk grown and vapour phase epitaxial indium phosphide
|
Guha, S.
|
|
1977
|
20 |
1 |
p. 27-28
2 p.
|
artikel
|
| 7 |
Evaluation of an integral in the theory of nonvolatile semiconductor memories
|
Ferris-Prabhu, A.V.
|
|
1977
|
20 |
1 |
p. 74-75
2 p.
|
artikel
|
| 8 |
GaAs-MeSFET for digital application
|
Kohn, E.
|
|
1977
|
20 |
1 |
p. 29-32
4 p.
|
artikel
|
| 9 |
Investigations on the damage caused by ion etching of SiO2 layers at low energy and high dose
|
Deppe, Hans R.
|
|
1977
|
20 |
1 |
p. 51-55
5 p.
|
artikel
|
| 10 |
Modelling of electroluminescent GaP diodes I (V) and L (V) characteristics
|
Vasilieff, G.
|
|
1977
|
20 |
1 |
p. 35-43
9 p.
|
artikel
|
| 11 |
Noise in silicon and FET's at high electric fields
|
Takagi, Keiji
|
|
1977
|
20 |
1 |
p. 1-3
3 p.
|
artikel
|
| 12 |
The effect of current suppression in the pn − n + diode of integrated injection logic
|
Yu, S.Y.
|
|
1977
|
20 |
1 |
p. 19-25
7 p.
|
artikel
|
| 13 |
The emitter efficiency of silicon transistors
|
Wilson, B.L.H.
|
|
1977
|
20 |
1 |
p. 71-74
4 p.
|
artikel
|
| 14 |
Theory and experiment for silicon Schottky barrier diodes at high current density
|
Wilkinson, J.M.
|
|
1977
|
20 |
1 |
p. 45-50
6 p.
|
artikel
|
| 15 |
Tunneling of electrons from Si into thermally grown SiO2
|
Weinberg, Z.A.
|
|
1977
|
20 |
1 |
p. 11-18
8 p.
|
artikel
|
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