| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A rapid and accurate method for measuring the thickness of diffused layers in silicon and germanium
|
Jansen, B.
|
|
|
2 |
1 |
p. 14-16, IN3-IN4, 17
|
artikel
|
| 2 |
Editorial Board
|
|
|
|
2 |
1 |
p. IFC
|
artikel
|
| 3 |
Erratum
|
|
|
|
2 |
1 |
p. 78
|
artikel
|
| 4 |
Field-effect pinch-off of surface leakage in high-voltage diodes
|
Kan, T.
|
|
|
2 |
1 |
p. 68-69
|
artikel
|
| 5 |
Impurity concentrations in the regrown region of In-Ge alloyed junctions
|
Roberts, F.E.
|
|
|
2 |
1 |
p. 8-10, IN1-IN2, 11-13
|
artikel
|
| 6 |
Micromasking for chemical etching of semiconductors
|
Denda, S.
|
|
|
2 |
1 |
p. 69, IN11
|
artikel
|
| 7 |
Problems related to p-n junctions in silicon
|
Shockley, William
|
|
|
2 |
1 |
p. 35-60, IN9-IN10, 61-67
|
artikel
|
| 8 |
Programming the zone-refining equation for a digital computer
|
Parmee, J.L.
|
|
|
2 |
1 |
p. 70-71
|
artikel
|
| 9 |
Recent advances in microminiaturization, reliable components and cooling techniques
|
Dummer, G.W.A.
|
|
|
2 |
1 |
p. 18-24, IN5-IN6, 25-30, IN7-IN8, 31-34
|
artikel
|
| 10 |
Silicon Carbide—A high temperature semiconductor
|
Pincherle, L.
|
|
|
2 |
1 |
p. 77
|
artikel
|
| 11 |
Some effects of material parameters on the design of surface space-charge varactors
|
Frankl, D.R.
|
|
|
2 |
1 |
p. 71-76
|
artikel
|
| 12 |
Spectral response of solar-cell structures
|
Terman, L.M.
|
|
|
2 |
1 |
p. 1-7
|
artikel
|
Tijdschrift beschrijving