| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An amorphous silicon thin film transistor: Theory and experiment
|
Neudeck, Gerold W.
|
|
1976
|
19 |
8 |
p. 721-729
9 p.
|
artikel
|
| 2 |
Discriminating between noise sources by modulation techniques
|
Choe, H.M.
|
|
1976
|
19 |
8 |
p. 737-
1 p.
|
artikel
|
| 3 |
Effect of a d.c. electric field parallel to the depletion layer on the microwave oscillations in a p-i-n IMPATT diode
|
Roy, S.K.
|
|
1976
|
19 |
8 |
p. 707-710
4 p.
|
artikel
|
| 4 |
Maximum free charge in two-phase surface charge-coupled devices
|
Board, Kenneth
|
|
1976
|
19 |
8 |
p. 715-720
6 p.
|
artikel
|
| 5 |
Parasitic SCR between a Schottky diode and an adjacent transistor
|
Kroell, Karl E.
|
|
1976
|
19 |
8 |
p. 711-714
4 p.
|
artikel
|
| 6 |
Phosphorus diffusion in gallium arsenide
|
Jain, G.C.
|
|
1976
|
19 |
8 |
p. 731-736
6 p.
|
artikel
|
| 7 |
RF relaxation oscillations in polycrystalline TiO2 thin films
|
Taylor, G.
|
|
1976
|
19 |
8 |
p. 669-674
6 p.
|
artikel
|
| 8 |
Silicon p−n insulator-metal (p-n-I-M) devices
|
Yamamoto, Tatsuo
|
|
1976
|
19 |
8 |
p. 701-706
6 p.
|
artikel
|
| 9 |
Some properties of ion-implanted p−n junctions in silicon
|
Zandveld, P.
|
|
1976
|
19 |
8 |
p. 659-667
9 p.
|
artikel
|
| 10 |
The power spectrum of injection lasers: The theory and experiment on a nonlinear model of lasing
|
Sommers Jr, H.S.
|
|
1976
|
19 |
8 |
p. 675-699
25 p.
|
artikel
|
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