| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An evaluation of injection modeling
|
Jaeger, Richard C.
|
|
1976
|
19 |
7 |
p. 639-643
5 p.
|
artikel
|
| 2 |
A new mobility-field expression for the calculation of MOSFET characteristics
|
Roychoudhury, Diptiman
|
|
1976
|
19 |
7 |
p. 656-657
2 p.
|
artikel
|
| 3 |
Anodic oxidation of gallium arsenide
|
Arora, Brij M.
|
|
1976
|
19 |
7 |
p. 657-658
2 p.
|
artikel
|
| 4 |
A simplified theory of the BARITT silicon microwave diode
|
Wright, G.T.
|
|
1976
|
19 |
7 |
p. 615-623
9 p.
|
artikel
|
| 5 |
Avalanche breakdown voltage of a microwave PIN diode
|
Ratnakumar, K.N.
|
|
1976
|
19 |
7 |
p. 655-656
2 p.
|
artikel
|
| 6 |
Behaviour of burst noise under UV and visible radiation
|
Rodriguez, T.
|
|
1976
|
19 |
7 |
p. 573-575
3 p.
|
artikel
|
| 7 |
Excess capacitance and non-ideal Schottky barriers on GaAs
|
Vasudev, Prahalad K.
|
|
1976
|
19 |
7 |
p. 557-559
3 p.
|
artikel
|
| 8 |
Franz-Keldysh effect and photovoltaic edge of PbSe IR detectors
|
Chambouleyron, I.E.
|
|
1976
|
19 |
7 |
p. 605-609
5 p.
|
artikel
|
| 9 |
Large-signal analysis of the silicon pnp-BARITT diode
|
Karasek, M.
|
|
1976
|
19 |
7 |
p. 625-631
7 p.
|
artikel
|
| 10 |
One-carrier space-charge limited currents in solids containing double-level centers
|
Meirsschaut, Simon
|
|
1976
|
19 |
7 |
p. 633-637
5 p.
|
artikel
|
| 11 |
On the calculation of spreading resistance correction factors
|
Choo, S.C.
|
|
1976
|
19 |
7 |
p. 561-565
5 p.
|
artikel
|
| 12 |
Photo-thermal probing of Si-SiO2 surface centers—I
|
Pierret, R.F.
|
|
1976
|
19 |
7 |
p. 577-591
15 p.
|
artikel
|
| 13 |
Photo-thermal probing of Si-SiO2 surface centers—II
|
Pierret, R.F.
|
|
1976
|
19 |
7 |
p. 593-603
11 p.
|
artikel
|
| 14 |
The optimum growth composition for GaAs1−xPx LEDs from a high pressure experiment
|
Pitt, G.D.
|
|
1976
|
19 |
7 |
p. 567-571
5 p.
|
artikel
|
| 15 |
Thermal emission rates and activation energies of electrons at tantalum centers in silicon
|
Miyata, Kenji
|
|
1976
|
19 |
7 |
p. 611-613
3 p.
|
artikel
|
| 16 |
The ƒT of bipolar transistors with thin lightly doped bases
|
Beale, J.R.A.
|
|
1976
|
19 |
7 |
p. 549-556
8 p.
|
artikel
|
| 17 |
Transient high level majority and minority carrier photocurrents in p-type silicon Schottky barrier diodes—I comparison with analytic theory
|
Norde, H.
|
|
1976
|
19 |
7 |
p. 653-655
3 p.
|
artikel
|
| 18 |
Transient high level majority and minority carrier photocurrents in p-type silicon Schottky barrier diodes—II
|
Janney, R.
|
|
1976
|
19 |
7 |
p. 645-652
8 p.
|
artikel
|
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