| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ageing in ZnSe:Mn light emitting diodes
|
Wilson, J.I.B.
|
|
1976
|
19 |
6 |
p. 433-436
4 p.
|
artikel
|
| 2 |
Behavior of various silicon Schottky barrier diodes under heat treatment
|
Parekh, P.C.
|
|
1976
|
19 |
6 |
p. 493-494
2 p.
|
artikel
|
| 3 |
Capacitance of MOS diodes on substrates doped non-uniformly near the surface
|
Feltl, Helmut
|
|
1976
|
19 |
6 |
p. 425-431
7 p.
|
artikel
|
| 4 |
Control of Schottky barrier height using highly doped surface layers
|
Shannon, J.M.
|
|
1976
|
19 |
6 |
p. 537-543
7 p.
|
artikel
|
| 5 |
Current noise in surface layer integrated resistors
|
Hsieh, K.C.
|
|
1976
|
19 |
6 |
p. 451-453
3 p.
|
artikel
|
| 6 |
C-V characteristics of ion implanted depletion IGFETs and buried channel CCDs
|
Taylor, G.W.
|
|
1976
|
19 |
6 |
p. 495-503
9 p.
|
artikel
|
| 7 |
Effect of longitudinal field on shift in cross-over voltage in SCL conduction for Al-CdS-Au films
|
Lal, Pyare
|
|
1976
|
19 |
6 |
p. 546-547
2 p.
|
artikel
|
| 8 |
Influence of a flatband-voltage variation along the channel on the drain characteristics of a TFT
|
Burgelman, M.
|
|
1976
|
19 |
6 |
p. 459-461
3 p.
|
artikel
|
| 9 |
n-GaAs Schottky diodes metallized with Ti and Pt/Ti
|
Sinha, A.K.
|
|
1976
|
19 |
6 |
p. 489-492
4 p.
|
artikel
|
| 10 |
One-dimensional calculation of thyristor forward voltages and holding currents
|
Kurata, Mamoru
|
|
1976
|
19 |
6 |
p. 527-535
9 p.
|
artikel
|
| 11 |
Optimized design of GaAs FET's for low-noise microwave amplifiers
|
Asai, Shojiro
|
|
1976
|
19 |
6 |
p. 463-470
8 p.
|
artikel
|
| 12 |
Separation of surface and bulk components in MOS-C generation rate measurements
|
Small, D.W.
|
|
1976
|
19 |
6 |
p. 505-511
7 p.
|
artikel
|
| 13 |
Solar cell conducting grid structure
|
Heizer, K.W.
|
|
1976
|
19 |
6 |
p. 471-472
2 p.
|
artikel
|
| 14 |
Temperature dependence of boron diffusion in (111), (110) and (100) silicon
|
Masetti, G.
|
|
1976
|
19 |
6 |
p. 545-546
2 p.
|
artikel
|
| 15 |
The effects of radiation damage on the properties of Ni-nGaAs Schottky diodes—I
|
Taylor, Paul D.
|
|
1976
|
19 |
6 |
p. 473-479
7 p.
|
artikel
|
| 16 |
The effects of radiation damage on the properties of Ni-nGaAs Schottky diodes—II Terminal characteristics
|
Taylor, Paul D.
|
|
1976
|
19 |
6 |
p. 481-488
8 p.
|
artikel
|
| 17 |
The electrical properties of zinc diffused indium phosphide
|
Hooper, A.
|
|
1976
|
19 |
6 |
p. 513-517
5 p.
|
artikel
|
| 18 |
Theory of life time measurements with the scanning electron microscope: Steady state
|
Berz, F.
|
|
1976
|
19 |
6 |
p. 437-445
9 p.
|
artikel
|
| 19 |
Theory of lifetime measurements with the scanning electron microscope: Transient analysis
|
Kuiken, H.K.
|
|
1976
|
19 |
6 |
p. 447-450
4 p.
|
artikel
|
| 20 |
Unintentional writing of a FAMOS memory device during reading
|
Jeppson, Kjell O.
|
|
1976
|
19 |
6 |
p. 455-457
3 p.
|
artikel
|
| 21 |
Variability study and design considerations of hyperabrupt junction voltage variable capacitors
|
Kumar, Rajendra
|
|
1976
|
19 |
6 |
p. 519-525
7 p.
|
artikel
|
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