| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A linear two-layer model for flat-band shift in irradiated MOS devices
|
Churchill, J.N.
|
|
1976
|
19 |
4 |
p. 291-296
6 p.
|
artikel
|
| 2 |
Avalanche breakdown voltage of hyperabrupt silicon p-n junctions
|
Gupta, A.K.
|
|
1976
|
19 |
4 |
p. 342-344
3 p.
|
artikel
|
| 3 |
Comments on: I c vs V BE law in double diffused bipolar transistors
|
Gergely, I.
|
|
1976
|
19 |
4 |
p. 344-
1 p.
|
artikel
|
| 4 |
Computer-aided numerical analysis of silicon solar cells
|
Fossum, Jerry G.
|
|
1976
|
19 |
4 |
p. 269-277
9 p.
|
artikel
|
| 5 |
Depletion V-groove MOS (VMOS) power transistors
|
Farzan, B.
|
|
1976
|
19 |
4 |
p. 297-306
10 p.
|
artikel
|
| 6 |
Effects of surface states on relaxation phenomena in MOS capacitors
|
Calzolari, P.U.
|
|
1976
|
19 |
4 |
p. 325-330
6 p.
|
artikel
|
| 7 |
Influence of clocking waveform on charge transfer in three phase charge coupled devices
|
Singh, M.P.
|
|
1976
|
19 |
4 |
p. 279-287
9 p.
|
artikel
|
| 8 |
Measurement of deep-level spatial distributions
|
Brotherton, S.D.
|
|
1976
|
19 |
4 |
p. 341-342
2 p.
|
artikel
|
| 9 |
Minority carrier injection in GeAg Schottky diodes
|
Manifacier, J.C.
|
|
1976
|
19 |
4 |
p. 289-290
2 p.
|
artikel
|
| 10 |
Noise correlation and noise reduction in GaAs light-emitting diodes
|
Bolleter, W.
|
|
1976
|
19 |
4 |
p. 319-324
6 p.
|
artikel
|
| 11 |
Photocurrent in a diffused p-n junction
|
Sinha, Amitabha
|
|
1976
|
19 |
4 |
p. 345-346
2 p.
|
artikel
|
| 12 |
Precise lattice parameter determination of dislocation-free gallium arsenide—I
|
Baker, J.F.C.
|
|
1976
|
19 |
4 |
p. 331-334
4 p.
|
artikel
|
| 13 |
Precise lattice parameter determination of dislocation-free gallium arsenide—II
|
Heckingbottom, R.
|
|
1976
|
19 |
4 |
p. 335-339
5 p.
|
artikel
|
| 14 |
Synthesis of base impurity distributions for improved figure of merit of transistors
|
Maheshwari, L.K.
|
|
1976
|
19 |
4 |
p. 307-312
6 p.
|
artikel
|
| 15 |
The influence of anisotropic stress on the electrical characteristics of GaAs1-x P x diodes
|
Fulop, W.
|
|
1976
|
19 |
4 |
p. 313-318
6 p.
|
artikel
|
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