| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Amplification of acoustic waves in semiconductors with dominant ionized impurity scattering
|
Sharma, S.K.
|
|
1976
|
19 |
12 |
p. 1029-1031
3 p.
|
artikel
|
| 2 |
Analysis of C-V data in the accumulation regime of MIS structures
|
Lehovec, Kurt
|
|
1976
|
19 |
12 |
p. 993-996
4 p.
|
artikel
|
| 3 |
A technique for measuring the impurity concentration of silicon-on-sapphire films using C-V plots
|
Worley, Eugene R.
|
|
1976
|
19 |
12 |
p. 997-1003
7 p.
|
artikel
|
| 4 |
Bulk and interface imperfections in semiconductors
|
Sah, C.T.
|
|
1976
|
19 |
12 |
p. 975-990
16 p.
|
artikel
|
| 5 |
Charge transfer in charge-coupled devices in the presence of interface states
|
Barsan, R.M.
|
|
1976
|
19 |
12 |
p. 1015-1019
5 p.
|
artikel
|
| 6 |
Comments on: Non-steady-state bulk-generation processes in pulsed metal-insulator-semiconductor capacitors
|
Grimbergen, C.A.
|
|
1976
|
19 |
12 |
p. 1040-1041
2 p.
|
artikel
|
| 7 |
Correlation coefficient of gate and drain noise at high electric field
|
Takagi, Keiji
|
|
1976
|
19 |
12 |
p. 1043-1045
3 p.
|
artikel
|
| 8 |
Double implanted UHF power transister with epitaxial overcoat contact to shallow emitter
|
Tsuchimoto, Takashi
|
|
1976
|
19 |
12 |
p. 1042-1043
2 p.
|
artikel
|
| 9 |
Editorial announcement
|
|
|
1976
|
19 |
12 |
p. I-
1 p.
|
artikel
|
| 10 |
Erratum
|
|
|
1976
|
19 |
12 |
p. 1049-
1 p.
|
artikel
|
| 11 |
Implanted high value resistors
|
Whight, Kenneth R.
|
|
1976
|
19 |
12 |
p. 1021-1027
7 p.
|
artikel
|
| 12 |
Plasma reactor design for the selective etching of SiO2 on Si
|
Heinecke, Rudolf A.H.
|
|
1976
|
19 |
12 |
p. 1039-1040
2 p.
|
artikel
|
| 13 |
Schottky solar cells on thin epitaxial silicon
|
Anderson, W.A.
|
|
1976
|
19 |
12 |
p. 973-974
2 p.
|
artikel
|
| 14 |
Studies of the theory of single and double injections in solids with a Gaussian trap distribution
|
Hwang, W.
|
|
1976
|
19 |
12 |
p. 1045-1047
3 p.
|
artikel
|
| 15 |
The influence of geometry on the interpretation of the current in epitaxial diodes
|
Grimbergen, C.A.
|
|
1976
|
19 |
12 |
p. 1033-1037
5 p.
|
artikel
|
| 16 |
The numerical solution of poisson's equation for two-dimensional semiconductor devices
|
Brown, G.W.
|
|
1976
|
19 |
12 |
p. 991-992
2 p.
|
artikel
|
| 17 |
Thermodynamic conditions for the validity of the thermionic emission-diffusion theory of Schottky diodes
|
Viktorovitch, P.
|
|
1976
|
19 |
12 |
p. 1041-1042
2 p.
|
artikel
|
| 18 |
Tunnelling current versus voltage characteristics in metal-insulator-metal films
|
Kerkides, P.
|
|
1976
|
19 |
12 |
p. 1009-1013
5 p.
|
artikel
|
| 19 |
Zinc diffusion in Al x Ga1−x P
|
Kleinknecht, Hans P.
|
|
1976
|
19 |
12 |
p. 1005-1006
2 p.
|
artikel
|
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