| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate two sections model for MOS transistor in saturation
|
Rossel, P.
|
|
1976
|
19 |
1 |
p. 51-56
6 p.
|
artikel
|
| 2 |
A method for calculating band profile and capacitance of nonuniformly doped Schottky barriers
|
Lubberts, G.
|
|
1976
|
19 |
1 |
p. 94-
1 p.
|
artikel
|
| 3 |
A method for calculating band profile and capacitance of nonuniformly doped schottky barriers
|
|
|
1976
|
19 |
1 |
p. 93-
1 p.
|
artikel
|
| 4 |
A nonlinear equivalent circuit for IMPATT diodes
|
Gupta, Madhu Sudan
|
|
1976
|
19 |
1 |
p. 23-26
4 p.
|
artikel
|
| 5 |
A stochastic invariant imbedding approach to avalanche noise in semiconductors
|
Walma, Alle A.
|
|
1976
|
19 |
1 |
p. 1-9
9 p.
|
artikel
|
| 6 |
A technique for directly plotting the doping profile of semiconductor wafers (“8-shaped way”)
|
Nakhmanson, R.S.
|
|
1976
|
19 |
1 |
p. 87-91
5 p.
|
artikel
|
| 7 |
Double injection for weak heating of current carriers
|
Akopyan, A.A.
|
|
1976
|
19 |
1 |
p. 41-46
6 p.
|
artikel
|
| 8 |
Editorial announcement
|
|
|
1976
|
19 |
1 |
p. i-
1 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
1976
|
19 |
1 |
p. IFC-
1 p.
|
artikel
|
| 10 |
Electrical and optical properties of AgInS2
|
Okamoto, K.
|
|
1976
|
19 |
1 |
p. 31-32
2 p.
|
artikel
|
| 11 |
Fabrication of short channel MOSFETs with refractory metal gates using RF sputter etching
|
Rodriguez, A.
|
|
1976
|
19 |
1 |
p. 17-20
4 p.
|
artikel
|
| 12 |
Interfacial states spectrum of a metal-silicon junction
|
Barret, C.
|
|
1976
|
19 |
1 |
p. 73-75
3 p.
|
artikel
|
| 13 |
Investigation of the transition from tunneling to impact ionization multiplication in silicon p-n junctions
|
Lukaszek, Wieslaw A.
|
|
1976
|
19 |
1 |
p. 57-71
15 p.
|
artikel
|
| 14 |
Memory traps in MNOS diodes measured by thermally stimulated current
|
Katsube, Teruaki
|
|
1976
|
19 |
1 |
p. 11-16
6 p.
|
artikel
|
| 15 |
Observation of dislocations in a silicon phototransistor by scanning electron microscopy using the barrier electron voltaic effect
|
Holt, D.B.
|
|
1976
|
19 |
1 |
p. 37-38
2 p.
|
artikel
|
| 16 |
On nonequilibrium C-V characteristics of MOS inversion region
|
Tsao, K.Y.
|
|
1976
|
19 |
1 |
p. 27-30
4 p.
|
artikel
|
| 17 |
Silicon dioxide masking of phosporus diffusion in silicon
|
|
|
1976
|
19 |
1 |
p. 93-
1 p.
|
artikel
|
| 18 |
The effects of impurity redistribution of the subthreshold leakage current in CMOS n-channel transistors
|
Jeppson, Kjell O.
|
|
1976
|
19 |
1 |
p. 83-85
3 p.
|
artikel
|
| 19 |
The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes
|
Mullins, Francis H.
|
|
1976
|
19 |
1 |
p. 47-50
4 p.
|
artikel
|
| 20 |
Threshold voltage of narrow channel field effect transistors
|
Kroell, Karl E.
|
|
1976
|
19 |
1 |
p. 77-81
5 p.
|
artikel
|
Tijdschrift beschrijving