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                             52 results found
no title author magazine year volume issue page(s) type
1 A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications Claramunt, S.
186 C p.
 article
2 Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance Pandey, Nilesh
186 C p.
 article
3 All inorganic and transparent ITO/boehmite/ITO structure by one-step synthesis method for flexible memristor Duan, Weijie
186 C p.
 article
4 Analysis of a Hall-Corbino disk plate having a point current source at the center Homentcovschi, Dorel
186 C p.
 article
5 Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications Ossorio, Ó.G.
186 C p.
 article
6 Barium titanate nanorods on micro-machined silicon substrate for performance enhancement of piezoelectric Nanogenerators (NGs) Kordlar, Amir Ghasemi
186 C p.
 article
7 Barrier height tuning in Ti/4H-SiC Schottky diodes Bellocchi, G.
186 C p.
 article
8 Channel doping effects in negative capacitance field-effect transistors Liu, Baoliang
186 C p.
 article
9 CMOS back-end-of-line compatible ferroelectric tunnel junction devices Deshpande, Veeresh
186 C p.
 article
10 Combined effects of NH3 and NF3 post plasma treatment on the performance of spray coated ZnO thin film transistors Ali, Arqum
186 C p.
 article
11 Coupled spin and charge drift-diffusion approach applied to magnetic tunnel junctions Fiorentini, S.
186 C p.
 article
12 Custom measurement system for memristor characterisation Lupo, F.V.
186 C p.
 article
13 Demonstration and characterization of 500 V MIM capacitor with Al2O3 dielectric layer for power integrated circuits Yu, Hao
186 C p.
 article
14 Diamond Schottky p-i-n diodes for high power RF receiver protectors Jha, Vishal
186 C p.
 article
15 Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology Jha, Jaya
186 C p.
 article
16 Effects of La and Ni doping on ferroelectric and photocatalytic properties of Aurivillius Bi7Ti3Fe3O21 Fang, Wei
186 C p.
 article
17 Evaluation of the average grain size of polycrystalline graphene using an electrical characterization method Park, Honghwi
186 C p.
 article
18 Exploiting the KPFM capabilities to analyze at the nanoscale the impact of electrical stresses on OTFTs properties Ruiz, A.
186 C p.
 article
19 Express method of electro-physical parameters extraction for power Schottky diodes Krasnov, Vasily A.
186 C p.
 article
20 Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature Paz, Bruna Cardoso
186 C p.
 article
21 Fully vacuum-free large-area organic solar cell fabrication from polymer top electrode Kang, Moon Hee
186 C p.
 article
22 Hot-carrier-induced device degradation in Schottky barrier ambipolar polysilicon transistor Cheon Kim, Dae
186 C p.
 article
23 Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs de M. Nogueira, Alexandro
186 C p.
 article
24 Improvement of inverted planar heterojunction solar cells efficiency by using KI/Alq3 hybrid exciton blocking layer Lamkaouane, Hind
186 C p.
 article
25 Influence of interface traps density and temperature variation on the NBTI effect in p-Type junctionless nanowire transistors Graziano Junior, Nilton
186 C p.
 article
26 Interconnect effects on thermal resistance of CMOS-SOI transistors in microwave power integrated circuits Alluri, Sravya
186 C p.
 article
27 Investigating interface states and oxide traps in the MoS2/oxide/Si system Coleman, E.
186 C p.
 article
28 Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures Serra di Santa Maria, F.
186 C p.
 article
29 Large-scale CMOS-compatible process for silicon nanowires growth and BC8 phase formation Mazzetta, I.
186 C p.
 article
30 Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint Zhao, D.
186 C p.
 article
31 Light-induced nonvolatile resistive switching in Cs0.15FA0.85PbI3-XBrX perovskite-based memristors Li, Yongfei
186 C p.
 article
32 Low temperature Ni/Si/Al ohmic contacts to p-type 4H-SiC Xu, Yang-xi
186 C p.
 article
33 490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics Liu, Kai
186 C p.
 article
34 Modeling and characterization of photovoltaic and photoconductive effects in insulated-gate field effect transistors under optical excitation Yoo, Han Bin
186 C p.
 article
35 Nanolayer boron-semiconductor interfaces and their device applications Nanver, Lis K.
186 C p.
 article
36 Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices Subhani, Khawaja Nizammuddin
186 C p.
 article
37 On-chip adaptive matching learning with charge-trap synapse device and ReLU activation circuit Ahn, Ji-Hoon
186 C p.
 article
38 Performance and reliability in back-gated CVD-grown MoS2 devices Marquez, Carlos
186 C p.
 article
39 Performance variation of solution-processed memristor induced by different top electrode Shen, Zongjie
186 C p.
 article
40 Phase-change memory electro-thermal analysis and engineering thanks to enhanced thermal confinement Serra, Anna Lisa
186 C p.
 article
41 Piezoelectric microsensor for selective detection of low concentrations of ammonia Hung, Tien-Tsan
186 C p.
 article
42 Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application Aouad, M.
186 C p.
 article
43 Pseudo-MOSFET transient behavior: Experiments, model, substrate and temperature effect Zhang, X.
186 C p.
 article
44 Ruthenium doped Ge2Sb2Te5 nanomaterial as fast speed phase-change materials with good thermal stability Tan, Zhilong
186 C p.
 article
45 Self-similar reconfigurable low-pass MEMS filters using coplanar waveguide based on silicon Guo, Xinglong
186 C p.
 article
46 Small signal model and analog performance analysis of negative capacitance FETs Eslahi, Hossein
186 C p.
 article
47 Structural and electronic rearrangement in ovonic switching GexSe1-x(0,4 ≤ x ≤ 0,72) films Konashuk, A.S.
186 C p.
 article
48 The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length Jiang, Guangyuan
186 C p.
 article
49 The observation window and the statistical modeling of RTN in time and frequency domain Wirth, Gilson
186 C p.
 article
50 Thickness dependence of dielectric properties in sub-nanometric Al2O3/ZnO laminates Upadhyay, M.
186 C p.
 article
51 Time-dependent spin injection Bebenin, N.G.
186 C p.
 article
52 20 Years of reconfigurable field-effect transistors: From concepts to future applications Mikolajick, T.
186 C p.
 article
                             52 results found
 
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