| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compensation law for reverse-biassed ZnSe Schottky diodes
|
Wilson, J.I.B.
|
|
1975
|
18 |
9 |
p. 759-761
3 p.
|
artikel
|
| 2 |
A method for calculating band profile and capacitance of nonuniformly doped Schottky barriers
|
Lubberts, G.
|
|
1975
|
18 |
9 |
p. 805-809
5 p.
|
artikel
|
| 3 |
A model of ohmic contacts to semiconductors
|
Pellegrini, B.
|
|
1975
|
18 |
9 |
p. 791-798
8 p.
|
artikel
|
| 4 |
Carrier temperature effects in a p−n junction
|
Stokoe, T.Y.
|
|
1975
|
18 |
9 |
p. 811-814
4 p.
|
artikel
|
| 5 |
Characteristics of enhancement/depletion (E/D) gate MOSFET fabricated using ion implantation
|
Sasaki, Nobuo
|
|
1975
|
18 |
9 |
p. 777-783
7 p.
|
artikel
|
| 6 |
Collection efficiency and transfer characteristics of CID image sensors
|
Anagnostopoulos, C.
|
|
1975
|
18 |
9 |
p. 771-776
6 p.
|
artikel
|
| 7 |
Equation formulation considerations for efficient numerical modeling of semiconductor phenomena
|
McAfee Jr., Leo C.
|
|
1975
|
18 |
9 |
p. 799-804
6 p.
|
artikel
|
| 8 |
Frequency response of the current multiplication process in MIS tunnel diodes
|
Green, M.A.
|
|
1975
|
18 |
9 |
p. 745-752
8 p.
|
artikel
|
| 9 |
Ge doped GaAs double heterojunction lasers with Si compensation
|
Ashley, K.L.
|
|
1975
|
18 |
9 |
p. 815-816
2 p.
|
artikel
|
| 10 |
Interface charge characteristics of MOS structures with different metals on steam grown oxides
|
Kar, S.
|
|
1975
|
18 |
9 |
p. 723-732
10 p.
|
artikel
|
| 11 |
Low frequency conductance and capacitance measurements on MOS capacitors in weak inversion
|
Saks, N.S.
|
|
1975
|
18 |
9 |
p. 737-744
8 p.
|
artikel
|
| 12 |
Planar InSb photodiodes fabricated by Be and Mg ion implantation
|
Hurwitz, C.E.
|
|
1975
|
18 |
9 |
p. 753-756
4 p.
|
artikel
|
| 13 |
Solubility of gold in p-type silicon
|
Brown, Margaret
|
|
1975
|
18 |
9 |
p. 763-770
8 p.
|
artikel
|
| 14 |
Stromverstärkung in ZnSe/CdSe-photoleiterschichten
|
Berger, Klaus
|
|
1975
|
18 |
9 |
p. 785-789
5 p.
|
artikel
|
| 15 |
The role of elevated temperatures in the implantation of GaAs
|
Davies, D.Eirug
|
|
1975
|
18 |
9 |
p. 733-736
4 p.
|
artikel
|
| 16 |
The variation of impurity ionization with doping in heavily doped germanium
|
Roy, D.K.
|
|
1975
|
18 |
9 |
p. 757-758
2 p.
|
artikel
|
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