| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An analysis and numerical solution for the electrical characteristics of field effect devices
|
Catalano, Genard T.
|
|
1975
|
18 |
7-8 |
p. 583-586
4 p.
|
artikel
|
| 2 |
A study of the surface photovoltage of silicon
|
Ewing, Joan R.
|
|
1975
|
18 |
7-8 |
p. 587-591
5 p.
|
artikel
|
| 3 |
Editorial announcement
|
|
|
1975
|
18 |
7-8 |
p. i-
1 p.
|
artikel
|
| 4 |
Effects of thermal excitation and quantum-mechanical transmission on photothreshold determination of Schottky barrier height
|
Anderson, C.Lawrence
|
|
1975
|
18 |
7-8 |
p. 705-713
9 p.
|
artikel
|
| 5 |
Electrical characteristics of boron diffused polycrystalline silicon layers
|
Horiuchi, S.
|
|
1975
|
18 |
7-8 |
p. 659-665
7 p.
|
artikel
|
| 6 |
Frequency dependence of photo-EMF of strongly inverted Ge and Si MIS structures—II experiments
|
Nakhmanson, R.S.
|
|
1975
|
18 |
7-8 |
p. 627-634
8 p.
|
artikel
|
| 7 |
Frequency dependence of the photo-EMF of strongly inverted Ge and Si MIS structures—I. Theory
|
Nakhmanson, R.S.
|
|
1975
|
18 |
7-8 |
p. 617-626
10 p.
|
artikel
|
| 8 |
High frequency hot electron conductivity and admittance in Si and Ge
|
Hess, Karl
|
|
1975
|
18 |
7-8 |
p. 667-669
3 p.
|
artikel
|
| 9 |
Influence of bevel angle and surface charge on the breakdown voltage of negatively beveled diffused p-n junctions
|
Bakowski, Mietek
|
|
1975
|
18 |
7-8 |
p. 651-654
4 p.
|
artikel
|
| 10 |
Minority carrier reflecting properties of semiconductor high-low junctions
|
Hauser, J.R.
|
|
1975
|
18 |
7-8 |
p. 715-716
2 p.
|
artikel
|
| 11 |
Noise in luminescent GaAs0·60P0·40 diodes at low injection rates—I
|
Hazendonk, T.J.
|
|
1975
|
18 |
7-8 |
p. 593-603
11 p.
|
artikel
|
| 12 |
Noise in luminescent GaAs0·60P0·40 diodes under non-uniform avalanche conditions—II
|
Hazendonk, T.J.
|
|
1975
|
18 |
7-8 |
p. 605-616
12 p.
|
artikel
|
| 13 |
Non-radiative recombination centers in GaAs0·6P0·4 red light-emitting diodes
|
Forbes, Leonard
|
|
1975
|
18 |
7-8 |
p. 635-640
6 p.
|
artikel
|
| 14 |
Processes at turn-on of thyristors
|
Cornu, Jozef
|
|
1975
|
18 |
7-8 |
p. 683-686
4 p.
|
artikel
|
| 15 |
Semiconductor profiling using an optical probe
|
Lile, D.L.
|
|
1975
|
18 |
7-8 |
p. 699-700
2 p.
|
artikel
|
| 16 |
Slow states in InSb/SiOx thin film transistors
|
Sewell, H.
|
|
1975
|
18 |
7-8 |
p. 641-649
9 p.
|
artikel
|
| 17 |
TFT characteristics with uniformly distributed traps in the semiconductor
|
Refioglu, H.Ilhan
|
|
1975
|
18 |
7-8 |
p. 720-721
2 p.
|
artikel
|
| 18 |
The effect of local non-uniformities on thermal switching and high field behaviour of structures with chalcogenide glasses
|
Popescu, Corneliu
|
|
1975
|
18 |
7-8 |
p. 671-681
11 p.
|
artikel
|
| 19 |
The influence of an energy-dependent relaxation time on the specular and diffuse scattering models of surface conduction in MOS structures
|
Baccarani, G.
|
|
1975
|
18 |
7-8 |
p. 718-720
3 p.
|
artikel
|
| 20 |
Theoretical influence of surface states and bulk traps on thin film transistor characteristics
|
van Calster, A.
|
|
1975
|
18 |
7-8 |
p. 691-698
8 p.
|
artikel
|
| 21 |
Two-dimensional analysis for response of a photo diode array
|
Mukherjee, M.K.
|
|
1975
|
18 |
7-8 |
p. 716-718
3 p.
|
artikel
|
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