| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Aluminum-silicon Schottky barriers as semiconductor targets for EBS devices
|
Namordi, M.R.
|
|
1975
|
18 |
6 |
p. 499-508
10 p.
|
artikel
|
| 2 |
Analysis of modified lateral PNP transistors
|
DeMassa, T.A.
|
|
1975
|
18 |
6 |
p. 481-490
10 p.
|
artikel
|
| 3 |
A review of the theory and technology for ohmic contacts to group III–V compound semiconductors
|
Rideout, V.L.
|
|
1975
|
18 |
6 |
p. 541-550
10 p.
|
artikel
|
| 4 |
A theoretical and experimental study of recombination in silicon p−n junctions
|
Ashburn, P.
|
|
1975
|
18 |
6 |
p. 569-577
9 p.
|
artikel
|
| 5 |
Boron diffusion in polycrystalline silicon layers
|
Horiuchi, S.
|
|
1975
|
18 |
6 |
p. 529-532
4 p.
|
artikel
|
| 6 |
Calculation of the switching time in junction diodes
|
de Smet, L.
|
|
1975
|
18 |
6 |
p. 557-562
6 p.
|
artikel
|
| 7 |
Electroluminescence in zinc selenide
|
Özsan, M.E.
|
|
1975
|
18 |
6 |
p. 519-527
9 p.
|
artikel
|
| 8 |
Electron mobility empirically related to the phosphorus concentration in silicon
|
Baccarani, G.
|
|
1975
|
18 |
6 |
p. 579-580
2 p.
|
artikel
|
| 9 |
Energy levels and concentrations for platinum in silicon
|
Lisiak, K.P.
|
|
1975
|
18 |
6 |
p. 533-540
8 p.
|
artikel
|
| 10 |
On the time dependency of the avalanche process in semiconductors
|
Walma, Alle A.
|
|
1975
|
18 |
6 |
p. 511-517
7 p.
|
artikel
|
| 11 |
Properties of compensated GaAs light-emitting diodes following 60Co irradiation
|
Share, Stewart
|
|
1975
|
18 |
6 |
p. 471-480
10 p.
|
artikel
|
| 12 |
Solid state thermal control for spacecraft
|
Harpster, Joseph W.C.
|
|
1975
|
18 |
6 |
p. 551-555
5 p.
|
artikel
|
| 13 |
Thermal noise in ion-implanted MOSFETs
|
Huang, C.
|
|
1975
|
18 |
6 |
p. 509-510
2 p.
|
artikel
|
| 14 |
The small signal admittance of carbon implanted p-n diodes
|
Howes, M.J.
|
|
1975
|
18 |
6 |
p. 491-497
7 p.
|
artikel
|
| 15 |
Unipolar current transport through metal-insulator-metal (MIM) structures, supplied with barrier contacts, in the diffusion limit
|
Cisneros, Gerardo
|
|
1975
|
18 |
6 |
p. 563-568
6 p.
|
artikel
|
| 16 |
Use of Ehrenberg's approximation in analytical solution of semiconductor barriers in weak inversion and accumulation
|
Hampshire, M.J.
|
|
1975
|
18 |
6 |
p. 580-581
2 p.
|
artikel
|
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