nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
An investigation of RF sputter etched silicon surfaces using helium ion backscatter
|
Sachse, Glen W. |
|
1975 |
18 |
5 |
p. 431-435 5 p. |
artikel |
2 |
Avalanche injection into the oxide in silicon gate-controlled devices—II. Experimental results
|
Bulucea, C. |
|
1975 |
18 |
5 |
p. 381-391 11 p. |
artikel |
3 |
Current tuning and the concept of avalanche resonance in IMPATT diodes under large signal operating conditions
|
Grierson, J.R. |
|
1975 |
18 |
5 |
p. 459-468 10 p. |
artikel |
4 |
Current-voltage characteristics of silicon metallic-silicide interfaces
|
Pellegrini, B. |
|
1975 |
18 |
5 |
p. 417-426 10 p. |
artikel |
5 |
Effect of deep impurity levels on Schottky barrier diode characteristics
|
Korol, A.N. |
|
1975 |
18 |
5 |
p. 375-379 5 p. |
artikel |
6 |
Fabrication of high sensitivity thin-film indium antimonide magnetoresistors
|
Nadkarni, G.S. |
|
1975 |
18 |
5 |
p. 393-397 5 p. |
artikel |
7 |
I C vs V BE law in double diffused bipolar transistors
|
Roulston, D.J. |
|
1975 |
18 |
5 |
p. 427-429 3 p. |
artikel |
8 |
Lifetime measurements in silicon epitaxial materials
|
Reichl, H. |
|
1975 |
18 |
5 |
p. 453-458 6 p. |
artikel |
9 |
Measurements on depletion-mode field effect transistors and buried channel MOS capacitors for the characterization of bulk transfer charge-coupled devices
|
Mohsen, A.M. |
|
1975 |
18 |
5 |
p. 407-416 10 p. |
artikel |
10 |
On the diffusion current in heavily doped semiconductors
|
Baccarani, G. |
|
1975 |
18 |
5 |
p. 469-470 2 p. |
artikel |
11 |
Resonance effects observed at the onset of Fowler-Nordheim tunneling in thin MOS structures
|
Petersson, Göran P. |
|
1975 |
18 |
5 |
p. 449-451 3 p. |
artikel |
12 |
Silicon dioxide masking of phosphorus diffusion in silicon
|
Ghoshtagore, R.N. |
|
1975 |
18 |
5 |
p. 399-406 8 p. |
artikel |
13 |
Theory of VHF detection and frequency multiplication with space-charge-limited current (SCLC) silicon diodes
|
Dascalu, D. |
|
1975 |
18 |
5 |
p. 437-448 12 p. |
artikel |