| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A bipolar lock-layer transistor
|
Warner Jr., R.M.
|
|
1975
|
18 |
4 |
p. 323-325
3 p.
|
artikel
|
| 2 |
A high sensitivity semiconductor strain sensitive circuit
|
Dorey, Anthony P.
|
|
1975
|
18 |
4 |
p. 295-299
5 p.
|
artikel
|
| 3 |
A mathematical foundation for linear lumped modeling techniques
|
Aaronson, Gerald
|
|
1975
|
18 |
4 |
p. 301-308
8 p.
|
artikel
|
| 4 |
A simple approximate method of estimating the effect of carrier diffusion in IMPATT diodes
|
Gupta, Madhu Sudan
|
|
1975
|
18 |
4 |
p. 327-330
4 p.
|
artikel
|
| 5 |
Avalanche injection into the oxide in silicon gate-controlled devices—I theory
|
Bulucea, C.
|
|
1975
|
18 |
4 |
p. 363-374
12 p.
|
artikel
|
| 6 |
Classical infrared mixing with solid state diodes
|
van der Ziel, A.
|
|
1975
|
18 |
4 |
p. 355-361
7 p.
|
artikel
|
| 7 |
Influence of the floating substrate potential on the characteristics of ESFI MOS transistors
|
Tihanyi, Jenö
|
|
1975
|
18 |
4 |
p. 309-314
6 p.
|
artikel
|
| 8 |
Ion-implanted microwave field-effect transistors in GaAs
|
Hunsperger, R.G.
|
|
1975
|
18 |
4 |
p. 349-353
5 p.
|
artikel
|
| 9 |
Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAs
|
Robinson, G.Y.
|
|
1975
|
18 |
4 |
p. 331-338
8 p.
|
artikel
|
| 10 |
TFT characteristics with distributed traps in the semiconductor
|
DeMassa, Thomas A.
|
|
1975
|
18 |
4 |
p. 315-319
5 p.
|
artikel
|
| 11 |
The mechanism of r.f. spike burn-out in Schottky barrier microwave mixers
|
Gerzon, P.H.
|
|
1975
|
18 |
4 |
p. 343-346
4 p.
|
artikel
|
| 12 |
Thermal resistance of heat sinks with temperature-dependent conductivity
|
Joyce, W.B.
|
|
1975
|
18 |
4 |
p. 321-322
2 p.
|
artikel
|
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