nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Analysis of passive infrared imaging system with IR stimulable phosphor
|
Anderson, W.W. |
|
1975 |
18 |
3 |
p. 247-255 9 p. |
artikel |
2 |
A simplified model for graded-gap heterojunctions
|
Cheung, D.T. |
|
1975 |
18 |
3 |
p. 263-266 4 p. |
artikel |
3 |
Electrical and cathodoluminescence measurements on ion implanted donor layers in GaAs
|
Woodcock, J.M. |
|
1975 |
18 |
3 |
p. 267-275 9 p. |
artikel |
4 |
Electron radiation effects on time-dependent dielectric breakdown in SiO2 films
|
Li, Seung P. |
|
1975 |
18 |
3 |
p. 287-288 2 p. |
artikel |
5 |
Erratum
|
|
|
1975 |
18 |
3 |
p. 293- 1 p. |
artikel |
6 |
Negative photocurrent in GaAs-(AlGa)As heterojunctions
|
Petrescu-Prahova, I.B. |
|
1975 |
18 |
3 |
p. 215-222 8 p. |
artikel |
7 |
On the double injection negative-resistance in magnetic field
|
Dolocan, Voicu |
|
1975 |
18 |
3 |
p. 227-234 8 p. |
artikel |
8 |
p-n junction PbS1-xSex photodiodes fabricated by Se+ ion implantation
|
Donnelly, J.P. |
|
1975 |
18 |
3 |
p. 288-290 3 p. |
artikel |
9 |
Preparation and properties of Mn-doped epitaxial gallium arsenide
|
Kordoš, P. |
|
1975 |
18 |
3 |
p. 223-226 4 p. |
artikel |
10 |
Shallow impurity states in semiconductors: Absorption cross-sections, excitation rates, and capture cross-sections
|
Anderson, W.W. |
|
1975 |
18 |
3 |
p. 235-245 11 p. |
artikel |
11 |
Stabilizing effects for the supercritical GaAs n + nn +-transferred electron amplifier
|
Källbäck, Bengt |
|
1975 |
18 |
3 |
p. 257-262 6 p. |
artikel |
12 |
Switching properties of epitaxial planar transistors operating in saturation
|
Bhattacharyya, A.B. |
|
1975 |
18 |
3 |
p. 277-286 10 p. |
artikel |
13 |
The nature of barrier height variations in alloyed Al-Si Schottky barrier diodes
|
Basterfield, J. |
|
1975 |
18 |
3 |
p. 290- 1 p. |
artikel |
14 |
Tracer investigations on the diffusion of phosphorus from doped oxide sources
|
Fränz, I. |
|
1975 |
18 |
3 |
p. 209-210 2 p. |
artikel |