| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Design considerations for improving low-temperature noise performance of silicon JFET's
|
Haslett, J.W.
|
|
1975
|
18 |
2 |
p. 199-207
9 p.
|
artikel
|
| 2 |
Determination of Si-metal work function differences by MOS capacitance technique
|
Kar, S.
|
|
1975
|
18 |
2 |
p. 169-181
13 p.
|
artikel
|
| 3 |
Determination of the semiconductor doping profile right up to its surface using the MIS capacitor
|
Ziegler, K.
|
|
1975
|
18 |
2 |
p. 189-198
10 p.
|
artikel
|
| 4 |
Electrical characteristics and threshold switching in amorphous semiconductors
|
Buckley, W.D.
|
|
1975
|
18 |
2 |
p. 127-128
2 p.
|
artikel
|
| 5 |
Graphical method for determining the flat band voltage for silicon on sapphire
|
Hynecek, Jaroslav
|
|
1975
|
18 |
2 |
p. 119-120
2 p.
|
artikel
|
| 6 |
Helical density waves and impact ionization in n-germanium at low temperatures (4·2–20 K)
|
Draheim, Peter
|
|
1975
|
18 |
2 |
p. 183-187
5 p.
|
artikel
|
| 7 |
Lead telluride-lead tin telluride heterojunction diode array
|
Wang, C.C.
|
|
1975
|
18 |
2 |
p. 121-122
2 p.
|
artikel
|
| 8 |
Resistors and diodes produced by Al-implantation in silicon
|
Runge, H.
|
|
1975
|
18 |
2 |
p. 149-150
2 p.
|
artikel
|
| 9 |
The evaluation of interface parameters in MIS structures—I. Theory
|
De Gryse, R.
|
|
1975
|
18 |
2 |
p. 151-159
9 p.
|
artikel
|
| 10 |
Thermal equilibrium noise of space charge limited current in silicon for holes with field-dependent mobility
|
Tandon, J.L.
|
|
1975
|
18 |
2 |
p. 113-118
6 p.
|
artikel
|
| 11 |
Threshold energy effect on avalanche breakdown voltage in semiconductor junctions
|
Okuto, Y.
|
|
1975
|
18 |
2 |
p. 161-168
8 p.
|
artikel
|
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