| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A monolithic integrated schottky diode for microwave mixers
|
Wortmann, Alois K.
|
|
1975
|
18 |
12 |
p. 1095-1096
2 p.
|
artikel
|
| 2 |
Analysis of vertical multijunction solar cells using a distributed circuit model
|
Shah, Pradeep
|
|
1975
|
18 |
12 |
p. 1099-1106
8 p.
|
artikel
|
| 3 |
An experimental method to analyse trapping centres in silicon at very low concentrations
|
Collet, M.G.
|
|
1975
|
18 |
12 |
p. 1077-1083
7 p.
|
artikel
|
| 4 |
An introduction to the theory of photovoltaic cells
|
Landsberg, P.T.
|
|
1975
|
18 |
12 |
p. 1043-1052
10 p.
|
artikel
|
| 5 |
A simplified technique for measuring fast surface states
|
Carl Shine, M.
|
|
1975
|
18 |
12 |
p. 1135-1140
6 p.
|
artikel
|
| 6 |
As+-ion implanted lead telluride p−n junction photodiodes
|
Donnelly, J.P.
|
|
1975
|
18 |
12 |
p. 1144-1146
3 p.
|
artikel
|
| 7 |
Control of relative etch rates of SiO2 and Si in plasma etching
|
Heinecke, Rudolf A.H.
|
|
1975
|
18 |
12 |
p. 1146-1147
2 p.
|
artikel
|
| 8 |
Electrical characteristics of 11B+-implanted p-channelMNOS transistors
|
Kunio Nakamura,
|
|
1975
|
18 |
12 |
p. 1085-1088
4 p.
|
artikel
|
| 9 |
Generation of the second harmonic in the space charge limited diode
|
Rutner, Efim
|
|
1975
|
18 |
12 |
p. 1073-1075
3 p.
|
artikel
|
| 10 |
Investigation of polycrystalline silicon layers by electron microscopy and x-ray diffraction
|
Horiuchi, S.
|
|
1975
|
18 |
12 |
p. 1111-1112
2 p.
|
artikel
|
| 11 |
Investigation of surface traps at the silicon-silicon monooxide interface by the C-V method
|
Popova, L.I.
|
|
1975
|
18 |
12 |
p. 1141-1142
2 p.
|
artikel
|
| 12 |
Investigation of the generation characteristics of metal-insulator-semiconductor structures
|
Gorban', A.P.
|
|
1975
|
18 |
12 |
p. 1053-1059
7 p.
|
artikel
|
| 13 |
Majority- and minority-carrier lifetime in MOS structures
|
Baccarani, G.
|
|
1975
|
18 |
12 |
p. 1115-1122
8 p.
|
artikel
|
| 14 |
Miniband parameters of semiconductor superlattices
|
Mukherji, D.
|
|
1975
|
18 |
12 |
p. 1107-1109
3 p.
|
artikel
|
| 15 |
The effect of doping-dependent mobility on base transit time in transistors
|
Maheshwari, L.K.
|
|
1975
|
18 |
12 |
p. 1142-1144
3 p.
|
artikel
|
| 16 |
The effect of spatially varying diffusion constant on the transient decay of short circuit current in electron irradiated p−n junctions
|
Hoff, Philip H.
|
|
1975
|
18 |
12 |
p. 1069-1072
4 p.
|
artikel
|
| 17 |
The effects of carrier accumulation at the cathode on the negative resistance induced by avalanche injection in Si bulk devices
|
Vitale, Gianfranco
|
|
1975
|
18 |
12 |
p. 1123-1130
8 p.
|
artikel
|
| 18 |
The gettering of boron by an ion-implanted antimony layer in silicon
|
Fair, Richard B.
|
|
1975
|
18 |
12 |
p. 1131-1134
4 p.
|
artikel
|
| 19 |
The interaction between semiconductors and acoustic surface waves—A review
|
Gunshor, R.L.
|
|
1975
|
18 |
12 |
p. 1089-1093
5 p.
|
artikel
|
| 20 |
Transient charging currents in insulators
|
Wintle, H.J.
|
|
1975
|
18 |
12 |
p. 1039-1042
4 p.
|
artikel
|
| 21 |
V-groove (VMOS) conductively connected charge coupled devices
|
Parks, C.M.
|
|
1975
|
18 |
12 |
p. 1061-1064
4 p.
|
artikel
|
Tijdschrift beschrijving