| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A bibliography on semiconductor device modeling
|
Agajanian, A.H.
|
|
1975
|
18 |
11 |
p. 917-929
13 p.
|
artikel
|
| 2 |
An understanding of ohmic contact formation with Ge doping of n-GaAs
|
Jaros, M.
|
|
1975
|
18 |
11 |
p. 1029-1030
2 p.
|
artikel
|
| 3 |
A theoretical assessment of low and high bandwidth gallium arsenide, germanium and silicon avalanche photodiodes for optical communication systems
|
Grierson, J.R.
|
|
1975
|
18 |
11 |
p. 1003-1011
9 p.
|
artikel
|
| 4 |
Boron and phosphorus diffusion through an SiO2 layer from a doped polycrystalline Si source under various drive-in ambients
|
Shimakura, K.
|
|
1975
|
18 |
11 |
p. 991-997
7 p.
|
artikel
|
| 5 |
Breakdown and capacitance properties of hyperabrupt epitaxial Schottky barrier diodes
|
Kumar, Rajendra
|
|
1975
|
18 |
11 |
p. 999-1002
4 p.
|
artikel
|
| 6 |
Closed form solution for the linear graded channel JFET
|
DeMassa, Thomas A.
|
|
1975
|
18 |
11 |
p. 931-932
2 p.
|
artikel
|
| 7 |
Determination of a microwave transistor model based on an experimental study of its internal structure
|
Kronquist, R.L.
|
|
1975
|
18 |
11 |
p. 949-963
15 p.
|
artikel
|
| 8 |
Determination of generation lifetime from the small-signal transient behavior of MOS capacitors
|
Zechnall, Wolf
|
|
1975
|
18 |
11 |
p. 971-976
6 p.
|
artikel
|
| 9 |
Effect of electron-electron interactions on the ionization rate of charge carriers in semiconductors
|
Ghosh, R.
|
|
1975
|
18 |
11 |
p. 945-948
4 p.
|
artikel
|
| 10 |
Effect of illumination intensity on thermally stimulated current curves
|
Rabie, S.A.
|
|
1975
|
18 |
11 |
p. 1034-1035
2 p.
|
artikel
|
| 11 |
Effect of impact ionization on the saturated drift velocity of charge carriers in semiconductors at high electric field
|
Roy, S.K.
|
|
1975
|
18 |
11 |
p. 1035-1037
3 p.
|
artikel
|
| 12 |
“GAMBIT: GAte Modulated BIpolar Transistor”
|
Jayant Baliga, B.
|
|
1975
|
18 |
11 |
p. 937-941
5 p.
|
artikel
|
| 13 |
Green-emitting diodes in vapor phase epitaxial GaP
|
Stringfellow, G.B.
|
|
1975
|
18 |
11 |
p. 1019-1028
10 p.
|
artikel
|
| 14 |
Injection current flow through thin insulator films
|
O'Reilly, Thomas J.
|
|
1975
|
18 |
11 |
p. 965-968
4 p.
|
artikel
|
| 15 |
Limiting flicker noise in MOSFETs
|
van der Ziel, A.
|
|
1975
|
18 |
11 |
p. 1031-
1 p.
|
artikel
|
| 16 |
Measurement of the electrical impurity profile of implanted ions, using the pulsed MOS C-V technique
|
Verjans, J.
|
|
1975
|
18 |
11 |
p. 911-916
6 p.
|
artikel
|
| 17 |
Q-band bulk-effect microwave modulation by P-InSb
|
Tan, B.T.G.
|
|
1975
|
18 |
11 |
p. 943-944
2 p.
|
artikel
|
| 18 |
Reciprocal C-V plots using a pulse technique
|
Choe, Y.M.
|
|
1975
|
18 |
11 |
p. 1032-1033
2 p.
|
artikel
|
| 19 |
Shot noise in back biased p-n silicon diodes
|
van der Ziel, A.
|
|
1975
|
18 |
11 |
p. 969-970
2 p.
|
artikel
|
| 20 |
Tellurium-implanted N+ layers in GaAs
|
Pashley, R.D.
|
|
1975
|
18 |
11 |
p. 977-981
5 p.
|
artikel
|
| 21 |
The “barrier mode” behaviour of a junction FET at low drain currents
|
Brewer, R.J.
|
|
1975
|
18 |
11 |
p. 1013-1017
5 p.
|
artikel
|
| 22 |
Thermal noise in the linear graded channel junction FET
|
DeMassa, Thomas A.
|
|
1975
|
18 |
11 |
p. 933-935
3 p.
|
artikel
|
| 23 |
Transient processes in gunn diodes
|
Levinstein, Michael E.
|
|
1975
|
18 |
11 |
p. 983-990
8 p.
|
artikel
|
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