| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An approximate model for boron drive diffusions in oxidizing ambients
|
Hall, L.A.
|
|
1975
|
18 |
10 |
p. 875-879
5 p.
|
artikel
|
| 2 |
A new type of flicker noise in microwave MOSFETs
|
Huang, C.
|
|
1975
|
18 |
10 |
p. 885-886
2 p.
|
artikel
|
| 3 |
A unified approach to the base widening mechanisms in bipolar transistors
|
Rey, G.
|
|
1975
|
18 |
10 |
p. 863-866
4 p.
|
artikel
|
| 4 |
Bulk leakage in avalanche diodes due to silicon-metallization reactions
|
Goronkin, H.
|
|
1975
|
18 |
10 |
p. 891-892
2 p.
|
artikel
|
| 5 |
Comments on “surface-state spectra from thick-oxide MOS tunnel junction”
|
Venkateswaran, K.
|
|
1975
|
18 |
10 |
p. 908-
1 p.
|
artikel
|
| 6 |
Depletion-layer capacitance of any type of transition between two materials
|
Pellegrini, B.
|
|
1975
|
18 |
10 |
p. 887-889
3 p.
|
artikel
|
| 7 |
Determination of diffusion, partition and sticking coefficients for boron, phosphorus and antimony in silicon
|
Bennett, R.J.
|
|
1975
|
18 |
10 |
p. 833-838
6 p.
|
artikel
|
| 8 |
Diffusion phenomena at the interface of CdSe and PTFE thin films
|
De Vos, Alexis
|
|
1975
|
18 |
10 |
p. 895-900
6 p.
|
artikel
|
| 9 |
Effect of thermal etching on silicon epitaxial growth by vacuum sublimation
|
Kimura, A.
|
|
1975
|
18 |
10 |
p. 901-904
4 p.
|
artikel
|
| 10 |
Green's function approach to the thermal noise in space-charge-limited solid state diodes
|
Min, H.S.
|
|
1975
|
18 |
10 |
p. 908-909
2 p.
|
artikel
|
| 11 |
Influence of signal charge on the final decay characteristics of surface-channel charge-coupled-devices
|
El-Sissi, H.
|
|
1975
|
18 |
10 |
p. 867-870
4 p.
|
artikel
|
| 12 |
Low current base-collector boundary conditions in GHz frequency transistors
|
Roulston, D.J.
|
|
1975
|
18 |
10 |
p. 845-847
3 p.
|
artikel
|
| 13 |
On the direct currents through interface states in metal-semiconductor contacts
|
Card, H.C.
|
|
1975
|
18 |
10 |
p. 881-883
3 p.
|
artikel
|
| 14 |
Selective epitaxial growth of GaAs from the liquid phase
|
Piskorski, M.M.
|
|
1975
|
18 |
10 |
p. 859-860
2 p.
|
artikel
|
| 15 |
Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures—I. Electric field and potential distributions
|
Djurić, Z.
|
|
1975
|
18 |
10 |
p. 817-825
9 p.
|
artikel
|
| 16 |
Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance
|
Djurić, Z.
|
|
1975
|
18 |
10 |
p. 827-831
5 p.
|
artikel
|
| 17 |
Surface potential evaluation in MIS structures using Schottky diodes
|
Mak, M.K.
|
|
1975
|
18 |
10 |
p. 907-
1 p.
|
artikel
|
| 18 |
The electron-voltaic effect in CdS/Cu2S heterojunctions
|
Gale, R.W.
|
|
1975
|
18 |
10 |
p. 839-844
6 p.
|
artikel
|
| 19 |
The properties of some metal-InSb surface barrier diodes
|
Korwin-Pawlowski, M.L.
|
|
1975
|
18 |
10 |
p. 849-852
4 p.
|
artikel
|
| 20 |
Transient and steady state space-charge-limited current in CdTe
|
Canali, C.
|
|
1975
|
18 |
10 |
p. 871-872
2 p.
|
artikel
|
| 21 |
Transient emission and generation currents in Metal-Insulator-Semiconductor capacitors
|
Wei, L.S.
|
|
1975
|
18 |
10 |
p. 853-857
5 p.
|
artikel
|
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